WMBTA42 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – NPN EPITAXIAL SILICON TRANSISTORS

NPN EPITAXIAL SILICON TRANSISTORS
WMBTA42
High Voltage Transistor
Die Size 0.6*0.6mm
*^{* Power Dissipation: 225mW}
* ^{Collector Current: Max. 500mA}
* ^{Bonding Pad Size}
Emitoe 100*100mkm
Base 100*100mkm
SOT ——23
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃)
Characteristic Symbol
Test Conditions
Collector-emitter
Breakdown Voltage
V_CEO
I_C=1.0mA
Limits
Units
Min Typ Max
300 -
-
V
Collector-Base
Breakdown Voltage
V_CBO
I_C=100uA
300 _{- -}
V
Collector Cut-off
Current
Emitter Cut-off
Current
I_CBO V_CB=260V
I_EBO V_EB=6V
-
- 100 nA
-
- 100 nA
DC Current Gain
V_CE=10V, I_C=1mA
h_FE V_CE=10V, I_C=10mA
V_CE=10V, I_C=30mA
30
40 -
-
40
Base-Emitter
Saturation Voltage
V_BEsat I_C=20mA, I_b=2mA
-
- 0.90 V
Collector-Emitter
Saturation Voltage
V_CEsat I_C=20mA, I_B=2mA
-
- _{0.35 V}
Transition
Frequency
f_r
V_CE=20V,
I_C=10mA,f=10MHz
50 -
- MHz
Collector-Base
Capacitance
C_cb V_CB=20V, f=1MHz
-
- 3.0 pF
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
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