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| WMBT3906 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – PNP EPITAXIAL SILICON TRANSISTORS | |||
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PNP EPITAXIAL SILICON TRANSISTORS
WMBT3906
High Voltage Transistor
! Power Dissipation: 225mW
! Collector Current: Max.
0.2A
SOT ââ23
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25â)
Characteristic Symbol
Test Conditions
Limits
MIN. MAX.
Units
Collector-emitter
Breakdown Voltage
BVCEO
IC=1mA
40
V
Collector-Base
Breakdown Voltage
BVCBO
IC=100µA
40
V
Emitter-Base
Breakdown Voltage
BVEBO
IE=10µA
5.0
V
Collector Cut-off
Current
ICEX
VCE=30V, VBE=3V
50
nA
DC Current Gain
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Transition Frequency
Collector-Base
Capacitance
hFE1
hFE2
hFE3
hFE4
hFE5
BVESAT1
BVESAT2
VCE(SAT)1
VCE(SAT)2
fT
COB
VCE=1V, IC=100µA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA,IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10, VCE=20V f=100MHz
VCB=5V, f=1MHz
60
80
100 300
60
30
650 850 mV
950 mV
250 mV
400 mV
250
MHz
4.5 PF
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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