S8550LT1 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – HIGH VOLTAGE TRANSISTOR: (PNP)

S8550LT1
PNP EPITAXIAL SILICON TRANSISTORS
HIGH VOLTAGE TRANSISTOR: (PNP)
FEATURES
Die Size
0.44*0.44mm
Power dissipation
P_CM : 225mW（Tamb=25℃）
Collector current
I_CM : 0.5A
Collector-base voltage
V_(BR)CBO : 40V
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
Collector-base breakdown voltage V(BR)_CBO
Collector-emitter breakdown voltage V(BR)_CEO
Emitter-base breakdown voltage
V(BR)_EBO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
DC current gain(note)
H_{FE（1）}
H_{FE（2）}
Collector-emitter saturation voltage V_CE(sat)
Base-emitter saturation voltage
V_BE(sat)
Base-emitter voltage
V_BE(on)
Ic= 100µA , I_E=0
Ic= 1 mA，I_B=0
I_E= 100µA，I_C=0
V_CB= 30V , I_E=0
V_EB= 5V，I_C=0
V_CE= 1V, I_C= 150mA
V_CE= 1V, I_C= 500mA
I_C= 500mA, I_B= 50 mA
I_C= 500mA, I_B= 50 mA
I_C= 10mA, V_CE =1V
MIN
30
21
5.0
120
40
TYP MAX UNIT
V
V
V
1.0
µA
100
nA
400
500
mV
1.2
V
1.0
V
CLASSIFICATION OF H_FE(1)
Rank
B9C
Range
120-200
B9D
160-300
B9E
280-400
Wing Shing Computer Components Co., (H.K.)Ltd.
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