S8050LT1 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – PLASTIC-ENCAPSULATE TRANSISTORS

S8050LT1
S8050LT1
FEATURES
PLASTIC-ENCAPSULATE TRANSISTORS
TRANSISTOR（ NPN ）
SOT—23
Power dissipation
P_CM : 0.3
Collector current
I_CM : 0.5
Collector-base voltage
V_(BR)CBO : 40
W（Tamb=25℃）
A
V
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP MAX
Collector-base breakdown voltage
V_(BR)CBO
Ic= 100μA， I_E=0
40
Collector-emitter breakdown voltage
V_(BR)CEO
Ic= 0.1mA， I_B=0
25
Emitter-base breakdown voltage
V_(BR)EBO
I_E=100μA， I_C=0
5
Collector cut-off current
I_CBO
V_CB=40 V , I_E=0
0.1
Collector cut-off current
I_CEO
V_CB=20V , I_E=0
0.1
Emitter cut-off current
I_EBO
V_EB= 5V , I_C=0
0.1
DC current gain(note)
H_FE(1)
V_CE=1V, I_C= 50mA
120
350
H_FE(2)
V_CE=1V, I_C= 500mA
50
Collector-emitter saturation voltage
V_CE(sat) I_C=500 mA, I_B= 50mA
0.6
Base-emitter saturation voltage
V_CE(sat) I_C=500 mA, I_B= 50mA
1.2
Base-emitter voltage
V_BE
I_E= 100mA
1.4
Transition frequency
CLASSIFICATION OF H_FE(1)
Rank
Range
f_T
L
100-200
V_CE=6V, I_C= 20mA
f=30MHz
150
H
200-350
UNIT
V
V
V
μA
μA
μA
V
V
MHz
DEVICE MARKING : S8050LT1=J3Y
Wing Shing Computer Components Co., (H.K.)Ltd.
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