MJE13003 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – NPN SILICON TRANSISTOR

MJE13003
NPN SILICON TRANSISTOR
FEATURES
Power dissipation
P_CM : 1.25 W
Collector current
I_CM : 1.5 A
Collector-base voltage
V_(BR)CBO : 700 V
Tamb=25
TO 126
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS
Parameter
Tamb=25 unless otherwise specified
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage V(BR)_CBO
Ic= 1000 A I_E=0
700
Collector-emitter breakdown voltage V(BR)_CEO Ic= 10 mA I_B=0
400
Emitter-base breakdown voltage
V(BR)_EBO
I_E= 1000 A I_C=0
9
Collector cut-off current
I_CBO
V_CB= 700 V I_E=0
Collector cut-off current
I_CEO
V_CE= 400 V I_B=0
Emitter cut-off current
I_EBO
V_EB= 9
V I_C=0
DC current gain(note)
H_{FE 1}
H_{FE 2}
V_CE= 10 V, I_C= 150 mA
8
V_CE= 10 V, I_C= 0.5 mA
5
Collector-emitter saturation voltage V_CE(sat)
I_C=1000mA,I_B= 250 mA
Base-emitter saturation voltage
V_BE(sat)
I_C=1000mA, I_B= 250mA
Base-emitter voltage
V_BE
Transition frequency
f_T
Fall time
t_f
Storage time
t_s
CLASSIFICATION OF H_FE(1)
Rank
I_E= 2000 mA
V_CE=10V,Ic=100mA
f =1MHz
5
I_C=1A, I_B1=-I_B2=0.2A
V_CC=100V
Range
8-15
15-20
20-25
25-30
30-35
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:[phone] Fax:[phone]
E-mail: [e-mail]
MAX
1000
500
1000
40
UNIT
V
V
V
µA
µA
µA
1
V
1.2
V
3
V
MHz
0.5
µs
2.5
µs
35-40