MJ15015 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – Silicon Epitaxial Planar Transistor

MJ15015
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a metal envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-3
Tmb 25
IC = 4.0A; IB = 0.4A
IF = 4.0A
IC=4A,IB1=-IB2=0.4A,VCC=30V
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IC = 4.5A; IB = 1.6A
IC = 100mA; VCE = 5V
IC = 0.1A; VCE = 5V
VCB = 10V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
TYP MAX UNIT
-
200
V
-
120
V
-
15
A
-
A
-
180
W
-
1.5
V
1.5
2.0
V
6.0
s
MIN MAX UNIT
-
200
V
-
120
V
5
V
-
15
A
-
7
A
-
180
W
-55 150
-
150
TYP MAX UNIT
-
0.2
mA
-
0.2
mA
120
V
-
1.5
V
30
150
3
-
MHz
600- pF
4.5
us
3.0
us
6.0
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
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