MJ10023 Datasheet, PDF (1/1 Pages) ON Semiconductor – NPN SILICON POWER DARLINGTON TRANSISTOR

MJ10023
Silicon NPN Power Darlington Transistor
GENERAL DESCRIPTION
Darington transistor are designed for use as
general purpose amplifiers, switching and motor
control applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3
Tmb 25
IC = 20A; IB = 1.2A
f = 16KHz
IF = 20A
IC=20A,IB1=1.2A,VCC=250V
TYP MAX UNIT
-
600
V
-
400
V
-
40
A
-
80
A
-
250
W
-
6.0
V
-
A
5
V
1.0
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
-
600
V
-
400
V
-
40
A
-
80
A
-
20
A
-
40
A
-
250
W
-55 150
-
150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCEmax
VBE = 0V; VCE = VCEmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 20A; IB = 1.2A
IC = 20A; IB = 1.2A
IC = 10A; VCE = 5V
IF = 20A
VCB = 10V
IC=20A,IB1=1.2A,VCC=250V
IC=20A,IB1=1.2A,VCC=250V
TYP MAX UNIT
-
2.0
mA
-
5.0
mA
-
V
-
6
V
-
3.5
V
300
2.5
5.0
V
-
MHz
600
pF
1.0
3.0
s
0.3
1.0
s
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