BUT11 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon diffused power transistors

BUT11/11A
HIGH VOLTAGE POWER
SWITCHING APPLICATIONS
NPN SILICON TRANSISTOR
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
Characteristic
Collector-Emitter Voltage:BUT11
:BUT11A
Collector-Emitter Voltage:BUT11
:BUT11A
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCES
850
V
1000
V
VCEO
400
V
450
V
VEBO
9
V
IC
5
A
IC
10
A
IB
2
A
IB
4
A
PC
100
W
Tj
150
°c
Tstg
-65~150
°c
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Emitter Sustaining Voltage :BUT11
:BUTIIA
Collector Cutoff Current
:BUT11
:BUTIIA
Emitter Cutoff Current
Collector Emitter Saturation Voltage :BUT11
:BUTIIA
Base- Emitter Saturation Voltage
:BUT11
:BUTIIA
Turn-On Time
Storage Time
Fall Time
Symbol
Test Condition
Min
Typ
Max
VCEO(SUS) IC=100mA,
IB=0 400
450
ICES
VCE= 850V , VEB=
1
0
1
IEBO
VCE= 1000V , VEB= 0
10
VCE(sat)
VEB= 9V , IC=0
1.5
IC=3A,
IB=0.6A
1.5
VBE(sat)
IC=2.5A,
1.3
IB=0.5A
1.3
ton
IC=3A,
IB=0.6A
1
tstg
IC=2.5A,
4
tf
IB=0.5A
0.8
VCC= 250V , IC=2.5A
IB1= IB2=0.5A
Unit
V
V
mA
mA
µA
V
V
V
V
µS
µS
µS
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