BU407 Datasheet, PDF (1/1 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BU407
SILICON EPITAXIAL PLANNAR TRANSISTOR
GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
V_F
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
V_CESM
V_CEO
V_EBO
I_C
I_B
P_tot
T_stg
T_j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V_BE = 0V
TO-220
T_mb 25
I_C = 5.0A; I_B = 0.5A
I_C=5A,-I_B(end)=0.5A,V_CC=60V
CONDITIONS
V_BE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
I_CBO
I_EBO
V_(BR)CEO
V_CEsat
h_FE
f_T
C_c
t_on
t_s
t_f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V_CB=400V
V_EB=5V
I_C=10mA
I_C = 5.0A; I_B = 0.5A
I_C = 2.0A; V_CE = 5V
I_C = 0.5A; V_CE = 10V
V_CB = 10V
I_C=5A,-I_B(end)=0.5A,V_CC=60V
I_C=5A,-I_B(end)=0.5A,V_CC=60V
I_C=5A,-I_B(end)=0.5A,V_CC=60V
MIN MAX UNIT
330
V
150
V
7
A
15
A
60
W
1.0
V
V
0.75
s
MIN MAX UNIT
-
330
V
-
150
V
5
V
-
7
A
-
4
A
-
60
W
-55 150
-
150
MIN MAX UNIT
5.0
mA
1.0
mA
150
V
1.0
V
30
10
MHz
pF
us
us
0.75 us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:[phone] Fax:[phone]
E-mail: [e-mail]