BU406D Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

BU406D
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
400
V
VCEO
400
V
VEBO
6
V
IC
7
A
ICM
10
A
IB
4
A
PC
60
W
Tj
150
°C
Tstg
-65~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic
Collector Cutoff Current (VBE=0)
Emitter Cutoff Current(IC=0)
Collector Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain Bandwith Product
Turn-Off Time
Symbol
Test Condition
Min Typ Max
ICES
VCE= 400V , VEB= 0
5
IEBO
VEB= 6V , IC=0
1
VCE(sat) IC=5A, IB=0.5A
1.2
VBE(sat) IC=5A, IB=1.2A
1.5
fT
VCE= 10V, IC=500mA 10
toff
IC=5A, IB=0.5A
0.75
IC=5A, IB=0.8A
0.4
IC=6A, IB=1.2A
0.4
Unit
mA
mA
V
MHZ
µS
µS
µS
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