BU406 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

BU406/406H/408
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
400
V
VCEO
200
V
VEBO
6
V
IC
7
A
ICM
10
A
IB
4
A
PC
60
W
Tj
150
°C
Tstg
-65~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic
Collector Cutoff Current (VBE=0)
Emitter Cutoff Current(IC=0)
Collector Emitter Saturation Voltage :BU406
:BU406H
:BU408
Base- Emitter Saturation Voltage :BU406
:BU406H
:BU408
Current Gain Bandwith Product
Turn-Off Time
:BU406
:BU406H
:BU408
Symbol
Test Condition
Min Typ
ICES
IEBO
VCE(sat)
VBE(sat)
fT
toff
VCE= 400V , VEB=
0
VCE= 250V , VEB=
0
VCE= 250V , VEB=
0
Tc=150
VEB= 6V , IC=0
IC=5A,
IB=0.5A
IC=5A,
IB=0.8A
IC=6A,
IB=1.2A
IC=5A,
IB=0.5A 10
IC=5A,
IB=0.8A
IC=6A,
IB=1.2A
VCE= 10V ,
IC=500mA
IC=5A,
IB=0.5A
IC=5A,
IB=0.8A
IC=6A,
IB=1.2A
Max
5
100
1
1
1
1
1
1.2
1.2
1.5
0.75
0.4
0.4
Unit
mA
µA
mA
mA
V
V
V
V
V
V
MHZ
µS
µS
µS
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