BU326A Datasheet, PDF (1/1 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

BU326A
NPN SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS
SOLENOID AND RELAY DRIVERS
TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25 °C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
900
V
VCEO
400
V
IC
6
A
PC
60
W
Tj
150
°C
Tstg
-50~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Symbol
Test Condition
Min Typ
Max
Unit
ICBO VCB= 800V , IE=0
ICEO
VCB=400V , IB=0
hFE
VCE=5V , IC=0.6A 30
VCE(sat) IC=3A , IB=0.2A
10
µA
10
µA
2.5
V
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