BU2508DF Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

BU2508DF
NPN TRIPLE DIFFUSE
PLANAR SILICON TRANSISTOR
COLOR TV HORIZONTAL OUTPUT
APPLICATIONS(No Damper Diode)
! High Collector-Base Voltage(VCBO=1500V)
! High Speed Switching
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
TO-3PML
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
1500
1500
6
5
50
150
-50~150
Unit
V
V
V
A
W
℃
℃
TERMINATIONS
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (T_A=25℃)
Characteristic
Collector- Emitter Cutoff Current(VBE=0)
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Symbol
ICES
ICBO
IEBO
hFE
VCE(sat)
Test Condition
Min Typ
VCE=1400 V , RBE=0
VCB= 800 V , IE=0
VEB= 4V , IC=0
VCE= 5V , IC=1A
8
IC= 4 A , IB= 0.8A
Max
1.0
10
1.0
5.0
Unit
mA
µA
mA
V
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