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2SD820 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
2SD820
SILICON DIFFUSED POWER TRANSISTOR
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope , primarily for use in switching power
circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3
Tmb 25
IC = 4.0A; IB = 0.8A
f = 16KHz
ICsat = 4.0A; f = 16KHz
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector-emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 4.0A; IB = 0.8A
IC = 4.0A; IB = 0.8A
IC = 1.0A; VCE = 5V
IC =1.0A; VCE = 10V
VCB = 10V
IC=4.0A,IB1=-IB2=0.8A,VCC=105V
IC=4.0A,IB1=-IB2=0.8A,VCC=105V
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
MIN MAX UNIT
-
1500
V
-
600
V
-
5
A
-
A
-
50
W
5
V
-
A
V
1.0
s
MIN MAX UNIT
-
1500
V
-
600
V
5
A
-
A
-
1
A
-
A
-
50
W
-55 150
-
150
MIN MAX UNIT
-
0.1
mA
-
0.2
mA
-
V
-
5
V
-
1.5
V
8
40
V
1.0
-
MHz
165
pF
-
s
1.0
s