2SD716 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

2SD716
SILICON EPITAXIAL PLANAR TRANSISTOR
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
V_F
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
V_CESM
V_CEO
V_EBO
I_C
I_B
P_tot
T_stg
T_j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V_BE = 0V
TO-3P(I)D
T_mb 25
I_C = 3.0A; I_B = 0.3A
I_F = 3.0A
MIN MAX UNIT
-
100
V
-
100
V
-
6
A
-
A
-
60
W
-
2
V
1.5
2.0
V
-
s
CONDITIONS
V_BE = 0V
Tmb 25
MIN MAX UNIT
-
100
V
-
100
V
5
V
-
6
A
-
1.5
A
-
60
W
-55 150
-
150
ELECTRICAL CHARACTERISTICS
SYMBOL
I_CBO
I_EBO
V_(BR)CEO
V_CEsat
h_FE
f_T
C_c
t_on
t_s
t_f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V_CB=100V
V_EB=5V
I_C=1mA
I_C = 3.0A; I_B = 0.3A
I_C = 1A; V_CE = 5V
I_C = 1A; V_CE = 12V
V_CB = 10V
MIN MAX UNIT
-
0.2
mA
-
0.2
mA
100
V
-
2
V
50
250
12
-
MHz
150
pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
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