2SD313 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

2SD313
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SB507
TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
60
60
7
3
30
150
-50~150
Unit
V
V
V
A
W
o_C
o_C
ELECTRICAL CHARACTERISTICS (T_A=25^oC)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Condition
Min Typ
ICBO
VCB= 60V , IE=0
IEBO
VEB= 7V , IC=0
hFE1
VCE= 2V , IC=1A
40
VCE(sat)
IC=2A ,
fT
IB=0.2A
8
VCE= 5V ,
IC=0.5A
Max
100
100
320
1.0
Unit
µA
µA
V
MHZ
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