2SC4596E Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

2SC4596E
SILICON EPITAXIAL PLANNAR TRANSISTOR
GENERAL DESCRIPTION
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
V_BE
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Emitter forward voltage
Fall time
LIMITING VALUES
SYMBOL
V_CESM
V_CEO
V_EBO
I_C
I_B
P_tot
T_stg
T_j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V_BE = 0V
TO-220F
T_mb 25
I_C = 2A; I_B = 0.2A
I_E = 2A
I_C=2A,I_B1=-I_B2=0.2A,V_CC=30V
CONDITIONS
V_BE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
I_CBO
I_EBO
V_(BR)CEO
V_CEsat
h_FE
f_T
C_c
t_on
t_s
t_f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 30MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V_CB=100V
V_EB=5V
I_C=1mA
I_C =2A; I_B = 0.2A
I_C =1A; V_CE = 5V
I_C =0.5A; V_CE = 10V
V_CB = 10V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
MIN MAX UNIT
-
100
V
-
60
V
-
5
A
-
A
-
25
W
-
1.5
V
1.5
V
0.5
s
MIN MAX UNIT
-
100
V
-
60
V
5
V
-
5
A
-
1
A
-
25
W
-55 150
-
150
MIN MAX UNIT
0.1
mA
0.1
mA
60
V
1.5
V
100 200
120
MHz
80
pF
0.5
us
1.5
us
0.5
us
Wing Shing Computer Components Co., (H.K.)Ltd.
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