2SC3552 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

2SC3552
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
MT-100
Tmb 25
IC = 4.5A; IB = 1.0A
IF = 4.5A
IC=4.5A,IB1=-IB2=0.8A,VCC=80V
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=1000V
VEB=5V
IC=1mA
IC = 4.5A; IB = 1A
IC = 1.0A; VCE = 5V
IC = 1.0A; VCE = 12V
VCB = 10V
IC=4.5A,IB1=-IB2=0.8A,VCC=80V
IC=4.5A,IB1=-IB2=0.8A,VCC=80V
IC=4.5A,IB1=-IB2=0.8A,VCC=80V
TYP MAX UNIT
-
1100
V
-
500
V
-
12
A
-
A
-
150
W
-
3
V
1.5
2.0
V
0.3 1.0-
s
MIN MAX UNIT
-
1100
V
-
500
V
5
V
-
12
A
-
3
A
-
150
W
-55 150
-
150
TYP MAX UNIT
-
0.2
mA
-
0.2
mA
500
V
-
3.0
V
10
15
-
MHz
280
-
pF
us
us
0.3
1.0
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:[phone] Fax:[phone]
E-mail: [e-mail]