2SC2233 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)

2SC2233
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
ABSOLUTE MAXIMUM RATINGS (T_A=25℃)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
200
60
7
4
40
150
-50~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T_A=25℃)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
ICBO
IEBO
hFE1
VCE(sat)
fT
Test Condition
Min Typ
VCB= 200V , IE=0
VEB= 7V , IC=0
VCE= 5V , IC=1A
30
IC=3A , IB=0.3A
VCE= 5V , IC=0.5A
8
Max
100
100
150
1.0
Unit
µA
µA
V
MHZ
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