2SB834 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

2SB834
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SD880
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation(Tc=25°C)
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-7
V
IC
-3
A
PC
30
W
Tj
150
°C
Tstg
-50~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Condition Min Typ
ICBO VCB= -60V , IE=0
IEBO
VEB= -7V, IC=0
hFE1
VCE= -5V, IC=-0.5A 60
hFE2
VCE= -5V, IC=-3A
20
VCE(sat) IC=-3A , IB=-0.3A
-0.4
fT
VCE= -5V , IC=-0.5A
9
Max
-100
-100
300
-1.0
Unit
µA
µA
V
MHZ
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