2SB507 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

2SB507
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SD313
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
Symbol Rating
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
-60
-60
-7
-3
30
150
-50~150
Unit
V
V
V
A
W
25°c
25°c
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Condition Min Typ
ICBO VCB= -60V , IE=0
IEBO
VEB= -7V , IC=0
hFE1
VCE= -2V , IC=-1A 40
VCE(sat) IC=-2A , IB=-0.2A
fT
VCE=- 5V , IC=-0.5A
8
Max
-100
-100
320
-1.0
Unit
µA
µA
V
MHZ
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