2SA940 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,150V,25W)

2SA940
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT
TO-220
! Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
-150
V
VCEO
-150
V
VEBO
-5
V
IC
-1.5
A
PC
25
W
Tj
150
°C
Tstg
-50~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Condition Min Typ
ICBO
VCB= -120V , IE=0
IEBO
VEB= -5V, IC=0
hFE
VCE= -10V,
40
IC=-0.5A
VCE(sat) IC=-0.5 , IB=-50mA
fT
VCE= -10V,
4
IC=-0.5A
Max
-10
10
75
-1.5
Unit
µA
µA
V
MHZ
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