2SA671 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,50V,25W)

2SA671
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SC1061
ABSOLUTE MAXIMUM RATINGS (T_A=25℃)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-50
-50
-5
-3
25
150
-50~150
Unit
V
V
V
A
W
℃
℃
TO-220
ELECTRICAL CHARACTERISTICS (T_A=25℃)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
ICBO
IEBO
hFE1
VCE(sat)
fT
Test Condition
Min Typ
VCB=-50V , IE=0
VEB= -5V , IC=0
VCE= -4V , IC=-1A
35
IC=-3A , IB=-0.3A
VCE= -2V , IC=-0.5A
8
Max
-10
10
200
-1.0
Unit
µA
µA
V
MHZ
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:[phone] Fax:[phone]
E-mail: [e-mail]