2SA1939 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1939
PNP PLANAR SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
DC TO DC CONVERTER
! High Current Capability
! High Power Dissipation
! Complementary to 2SC5196
SC-65
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol Rating
Unit
VCBO
-120
V
VCEO
-80
V
VEBO
-6
V
IC
-6
A
PC
60
W
Tj
150
°C
Tstg
-55~150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Symbol
Test Condition
Min Typ
Max
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
IC=-5 mA IE=0
-120
IC=-10 mA
-80
RBE=∞
-6
IE=-5mA IC=0
VCB=-40V IE=0
VEB=-4V IC=0
55
VCE=-5V IC=-1A 50
VCE=-5V IC=-2A
IC=-3A IB=-0.3A
V
V
V
-0.1
mA
-0.1
mA
160
-2.5
V
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