W24257S-70LL-TR Datasheet, PDF (7/10 Pages) Winbond – 32K × 8 CMOS STATIC RAM

W24257
DATA RETENTION CHARACTERISTICS
(TA = 0 to 70° C)
PARAMETER
SYM. TEST CONDITIONS MIN. TYP. MAX. UNIT
VDD for Data Retention
VDR _{CS ≥ VDD -0.2V}
2.0 -
-
V
Data Retention Current
IDDDR _{CS ≥ VDD -0.2V}
LL -
- 15 µA
VDD = 3V
L-
- 30 µA
Chip Deselect to Data Retention Time TCDR See data retention
0-
- nS
Operation Recovery Time
TR waveform
TRC* -
- nS
TRC* = Read Cycle Time
DATA RETENTION WAVEFORM
DATA RETENTION MODE
V_DD
4.5V
TCDR
VDR >= 2V
4.5V
TR
CS
VIH
CS1 ^{>= V}DD -0.2V
VIH
ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
OPERATING
CURRENT
MAX. (mA)
STANDBY
CURRENT
MAX. (µA)
PACKAGE
W24257S-70LL
70
65
15
330 mil SOP
W24257S-70L
70
65
30
330 mil SOP
W24257Q-70LL
70
65
15
Standard type one TSOP
W24257Q-70L
70
65
30
Standard type one TSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
Publication Release Date: May 2000
-7-
Revision A14