W25Q80BVDAIG-TR Datasheet, PDF (60/74 Pages) Winbond – 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80BV
7.3 Power-up Timing and Write Inhibit Threshold
Parameter
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Symbol
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
spec
Unit
MIN
MAX
10
µs
5
ms
1.0
2.0
V
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
VWI
Reset
State
tVSL
Read Instructions
Allowed
tPUW
Device is fully
Accessible
Figure 38a. Power-up Timing and Voltage Levels
Time
Figure 38b. Power-up, Power-Down Requirement
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