W25Q40BW Datasheet, PDF (58/70 Pages) Winbond – 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q40BW
9.3 Power-up Timing and Write Inhibit Threshold
Parameter
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Symbol
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
spec
Unit
MIN
MAX
10
µs
1
10
ms
1.0
1.4
V
Note:
1. These parameters are characterized only.
Figure 37. Power-up Timing and Voltage Levels
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