W29GL064C Datasheet, PDF (38/66 Pages) Winbond – 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL064C
8.5 AC Characteristics
Description
Symbol
ALT STD
VCC=2.7V~3.6V
Min Typ Max Units
Valid Data Output after
Address
EVIO=VCC
EVIO=1.65V to VCC
tACC
tAA
70
ns
80
ns
Page Access Time
EVIO=VCC
EVIO=1.65V to VCC
tPACC
tPA
25
ns
35
ns
Valid data output after #CE EVIO=VCC
low
EVIO=1.65V to VCC
tCE
70
ns
80
ns
Valid data output after #OE EVIO=VCC
low
EVIO=1.65V to VCC
tOE
25
ns
35
ns
Read Period Time
EVIO=VCC
EVIO=1.65V to VCC
tRC
70
80
ns
ns
Data Output High Impedance after #OE high
tDF
20
ns
Data Output High Impedance after #CE high
tDF
20
ns
Output Hold Time from the earliest rising edge of
address, #CE, #OE
tOH
0
ns
Write Period Time
tWC
70
ns
Command write period time
tCWC
70
ns
Address Setup Time
tAS
0
ns
Address Setup Time to #OE low during Toggle
Bit Polling
tASO
15
ns
Address Hold Time
tAH
45
ns
Address Hold Time from #CE or #OE High during
Toggle Bit Polling
tAHT
0
ns
Data Setup Time
tDS
30
ns
Data Hold Time
tDH
0
ns
VCC Setup Time
tVCS
35
µs
Chip enable Setup Time
tCS
0
ns
Chip enable Hold Time
tCH
0
ns
Output enable Setup Time
tOES
0
ns
Output enable Hold
Time
Read
Toggle & Data#
Polling
0
tOEH
10
ns
ns
#WE Setup Time
tWS
0
ns
#WE Hold Time
tWH
0
ns
#CE Pulse Width
tCP
tCEPW
35
ns
#CE Pulse With High
tCPH tCEPWH 30
ns
#WE Pulse Width
tWP
35
ns
#WE Pulse Width High
tWPH
30
ns
Program/Erase active time EVIO=VCC
by RY/#BY
EVIO=1.65V to VCC
tBUSY
70
ns
80
ns
Read Recover Time before Write (#OE High to
#WE Low)
tGHWL
0
ns
Read Recover Time before Write (#OE High to
#CE Low)
tGHEL
0
ns
16-Word Write Buffer Program Operation
tWHWH1
96
µs
Effective Write Buffer
Program Operation
Word
tWHWH1
6
µs
Accelerated Effective Write
Buffer Operation
Per Word
tWHWH1
4.8
µs
32