W25X10AL_09 Datasheet, PDF (32/45 Pages) Winbond – 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X10AL, W25X20AL, W25X40AL, W25X80AL
11.3 Endurance and Data Retention
PARAMETER
CONDITIONS
Erase/Program Cycles 4KB sector, 64KB block or full chip.
Data Retention
55°C
MIN
100,000
MAX
20
UNIT
cycles
years
11.4 Power-up Timing and Write Inhibit Threshold
PARAMETER
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
SYMBOL
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
SPEC
MIN
10
1
1
Note:
1. These parameters are characterized only.
MAX
10
2
UNIT
µs
ms
V
Figure 20. Power-up Timing and Voltage Levels
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