W25Q16DVUUIG-TR Datasheet, PDF (20/80 Pages) Winbond – 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

7.2.2 Instruction Set Table 1 (Erase, Program Instructions)⁽¹⁾
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
Write Enable
06h
Write Enable for Volatile
50h
Status Register
Write Disable
Read Status Register-1
Read Status Register-2
04h
05h
(S7–S0) ⁽²⁾
35h
(S15-S8) ⁽²⁾
Write Status Register
01h
(S7–S0)
(S15-S8)
Page Program
02h
A23–A16
A15–A8
A7–A0
Quad Page Program
32h
A23–A16
A15–A8
A7–A0
Sector Erase (4KB)
20h
A23–A16
A15–A8
A7–A0
Block Erase (32KB)
52h
A23–A16
A15–A8
A7–A0
Block Erase (64KB)
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
C7h/60h
Erase / Program Suspend
75h
Erase / Program Resume
7Ah
Power-down
B9h
Continuous Read Mode
Reset ⁽⁴⁾
FFh
FFh
BYTE 5
BYTE 6
(D7–D0)
(D7–D0, …)⁽³⁾
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. Quad Page Program Input Data:
IO0 = (D4, D0, ……)
IO1 = (D5, D1, ……)
IO2 = (D6, D2, ……)
IO3 = (D7, D3, ……)
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
7.2.19 & 7.2.20 for more information.
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