W24512A Datasheet, PDF (2/10 Pages) Winbond – 64K X 8 HIGH SPEED CMOS STATIC RAM

W24512A
TRUTH TABLE
CS1 CS2 OE WE
H
X
X
X
X
L
X
X
L
H
H
H
L
H
L
H
L
H
X
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI VIN = VSS to VDD
Output Leakage
ILO VI/O = VSS to VDD
Current
CS1 = VIH (min.) or
CS2 = VIL (max.) or
-0.5 -
+0.8
V
+2.2 - VDD +0.5 V
-10
-
+10
µA
-10
-
+10
µA
OE = VIH (min.) or
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
VOL
VOH
IDD
ISB
ISB1
WE = VIL (max.)
IOL = +8.0 mA
IOH = -4.0 mA
CS1 = VIL (max.),
CS2 = VIH (min.)
I/O = 0mA, Cycle = min
Duty = 100%
CS1 = VIH (min.) or
CS2 = VIL (max.)
Cycle = min, Duty = 100%
CS1 ≥ VDD -0.2V or
CS2 ≤ 0.2V
-
-
2.4
-
-
-
-
-
-
-
0.4
V
-
V
160
mA
30
mA
10
mA
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
-2-