W9864G6KH Datasheet, PDF (14/42 Pages) Winbond – 1M X 4 BANKS X 16 BITS SDRAM

W9864G6KH
9.4 DC Characteristics
(VDD = 3.3V ± 0.3V for-5/-6 ,VDD = 2.7V~3.6V for -7 on TA = 0°C~70°C, VDD =3.3V ± 0.3V for -6I on TA = -40°C~85°C)
PARAMETER
SYM.
-5
Operating Current
tCK = min., tRC = min.
1 Bank Operation
IDD1
55
Active precharge command
cycling without burst operation
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/VIL (max.)
CKE = VIH
IDD2
30
Bank: Inactive State
CKE = VIL
IDD2P
2
(Power Down mode)
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
Bank: Inactive State
No Operating Current
tCK = min., CS = VIH (min.)
CKE = VIH
IDD2S
12
CKE = VIL
IDD2PS
2
(Power Down mode)
CKE = VIH
IDD3
40
CKE = VIL
Bank: Active State (4 Banks)
IDD3P
12
(Power Down mode)
Burst Operating Current
(tCK = min.)
IDD4
80
Read/Write command cycling
Auto Refresh Current
(tCK = min.)
Auto refresh command cycling
IDD5
65
Self Refresh Current
Self refresh mode
(CKE = 0.2V)
IDD6
2
MAX.
-6/-6I
50
25
2
12
2
35
12
75
60
2
UNIT NOTES
-7
45
3
20
3
2
3
12
2
mA
30
12
70
3, 4
55
3
2
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VDDQ)
LVTTL Output “H” Level Voltage
(IOUT = -2 mA)
LVTTL Output “L” Level Voltage
(IOUT = 2 mA)
SYMBOL
II(L)
lO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT NOTES
µA
µA
V
V
- 14 -
Publication Release Date: Nov. 12, 2013
Revision A02