W29C040 Datasheet, PDF (1/20 Pages) Winbond – 512K X 8 CMOS FLASH MEMORY

W29C040
512K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits.
The device can be written (erased and programmed) in-system with a standard 5V power supply. A
12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/
program) operations with extremely low current consumption compared to other comparable 5-volt
flash memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.
FEATURES
• Single 5-volt write (erase and program)
operations
• Fast page-write operations
− 256 bytes per page
− Page write (erase/program) cycle: 5 mS
(typ.)
− Effective byte-write (erase/program) cycle
time: 19.5 µS
− Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Two 16 KB boot blocks with lockout
• Typical page write (erase/program) cycles:
1K/10K (typ.)
• Read access time: 90/120 nS
• Ten-year data retention
• Software and hardware data protection
• Low power consumption
− Active current: 25 mA (typ.)
− Standby current: 20 µA (typ.)
• Automatic write (erase/program) timing with
internal VPP generation
• End of write (erase/program) detection
− Toggle bit
− Data polling
• Latched address and data
• All inputs and outputs directly TTL compatible
• JEDEC standard byte-wide pinouts
• Available packages: TSOP and PLCC
Publication Release Date: May 1999
-1-
Revision A5