W27E020 Datasheet, PDF (1/14 Pages) Winbond – 256K X 8 ELECTRICALLY ERASABLE EPROM

Preliminary W27E020
256K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E020 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 262144 × 8 bits that operates on a single 5 volt power supply. The W27E020
provides an electrical chip erase function.
FEATURES
• High speed access time:
70/90/120 nS (max.)
• Read operating current: 30 mA (max.)
• Erase/Programming operating current:
30 mA (max.)
• Standby current: 1 mA (max.)
• Single 5V power supply
PIN CONFIGURATIONS
• +14V erase/+12V programming voltage
• Fully static operation
• All inputs and outputs directly TTL/CMOS
compatible
• Three-state outputs
• Available packages: 32-pin 600 mil DIP and
PLCC
BLOCK DIAGRAM
Vpp
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
32
Vcc
2
31
PGM
3
30
A17
4
29
A14
5
28
A13
6
27
A8
7
26
A9
8
25
A11
9
24
OE
10
23
A10
11
22
CE
12
21
Q7
13
20
Q6
14
19
Q5
15
18
Q4
16
17
Q3
/
AAA V V P A
111 p c G1
2 56 p c M7
4321 33 3
A7
5
2 1 0 ₂₉
A14
A6
6
28
A13
A5
7
27
A8
A4
8
26
A9
A3
9
32-pin PLCC
25
A11
A2
10
24
OE
A1
11
23
A10
A0
12 _{1 1 1 1 1 1 2} 22
CE
Q0
13 4 5 6 7 8 9 0 21
Q7
Q QGQ QQQ
1 2 N3 45 6
D
PGM
CE
OE
CONTROL
A0
.
A17
VCC
GND
VPP
DECODER
Q0
OUTPUT
BUFFER
.
Q7
CORE
ARRAY
PIN DESCRIPTION
SYMBOL
A0−A17
Q0−Q7
CE
OE
PGM
VPP
VCC
GND
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program Enable
Program/Erase Supply Voltage
Power Supply
Ground
Publication Release Date: December 1997
-1-
Revision A1