SESD3ZXXC Datasheet, PDF (3/3 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
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FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
App•lBicaatcthioprnoceNsos dteesign, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
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of
failure
in
electronic
syste^Sm^Os^D. ^-1T²r³a^Hnsient
Voltage
Suppre^ops^ts^imor^izs^e(^bT^oV^aS^rd)^sa^pare^cea^. n ideal choice for ESD protection. They are capable of clamping the incoming
• Low power loss, high efficiency.
0.146(3.7)
trans_•ie_Hn_igt _hto_cua_rrl_eo_nw_{t c}e_an_po_au_big_lih_ty,le_lov_wel_fos_ru_wc_ah_rdth_voa_lt_tad_ga_em_dra_og_pe_. to the protected semiconductor is pr⁰e^.13v⁰e⁽³n^.3)ted.
0.012(0.3) Typ.
S^{• H}ur^igfa^hc^se^urgm^eo^cu^an^pat ^bT^iliV^tyS^. offers the best choice for minimal lead inductance. They serve as parallel
prote^••c_UGti_lo^utran_ardhe^riiglⁿe_hgm_-sfoe_prn_eoets^vd,^esrc^vwoo_itln_ctahn^gie_nec_gpt_.e^rod^teb^cte^iotw^n.een the signal lines to ground. As the transient rises abo₀v_.0e₇₁₍₁t_.h₈₎e
0.056(1.4)
opera• tSinilgicovnoeltpaigtaexioafl pthlaenadrecvhiicpe, ,mtehteal TsiVlicSonbjeucnoctmioens. a low impedance path diverting the transient current to
groun^• d^L.^eaT^dh^-e^freS^eE^pS^arD^ts3^mZx^eex^tC^enis^vit^rh^oe^nmid^eeⁿa^tal^lb^so^taaⁿr^dd^are^dv^se^ol^fprotection of ESD sensitive semiconductor components.
MIL-STD-19500 /228
•TRheoHtSinpyroSduOctDfo-r3p2a3ckipnagcckoadegesufafixllo"Gw"s design flexibility in the design of high density boards where the
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Mechanical data
ESD.
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
• Case : Molded plastic, SOD-123H
SOD_• -_T3_er2_m3_inaM_lse_:Pc_lh_ata_edn_ti_ec_rma_il_naD_lsa_, t_sa_olderable
per
MIL
,
-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
.106(2.70)
• Polarity : Indicated by cathode band_.091(2.30)
• Mounting Position : Any
.075(1.90)
• Weight : Approximated 0.011 gram _.059(1.50)
Dimensions in inches and (millimeters)
.043(1.10)
.031(0.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VRMS
14
21
28
35
42
56
70
105
140 ^V
.008(0.20)
VDC
20
30
40
50
60
.004(0.10)
80
100
150
200 ^V
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
.016(0.40)
30
superimposed on rated load (JEDEC method)
.010(0.25)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
.010(0.25)MIN.
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Dimensions in inches and (millimeters)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
m
10
Marking
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal R^Tes^yist^pan^eceⁿFr^uom^mJu^bnc^etio^rn to Ambient
Marking code
SESD3Z5C
CC
SESD3Z12C
12C
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.