MUN52XXDW1T1 Datasheet, PDF (3/12 Pages) WILLAS ELECTRONIC CORP – Dual Bias Resistor Transistors

Dual Bias Resistor Transistors
SC-88/SOT-363 Package
MUN5211DW1T1H
Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V _CB = 50 V, I _E = 0)
I _CBO
–
–
Collector-Emitter Cutoff Current (V _CE = 50 V, I _B = 0)
I _CEO
Emitter-Base Cutoff Current MUN5211DW1T1
I EBO
–
–
–
–
(V EB = 6.0 V, I C = 0)
MUN5212DW1T1
MUN5213DW1T1
–
–
–
–
MUN5214DW1T1
–
–
MUN5215DW1T1
–
–
MUN5216DW1T1
–
–
MUN5230DW1T1
–
–
MUN5231DW1T1
–
–
y _MUN5232DW1T1
–
–
r _MUN5233DW1T1
–
–
a _MUN5234DW1T1
–
–
MUN5235DW1T1
–
–
in ^MUN5236DW1T1
–
–
MUN5237DW1T1
–
–
Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0)
V (BR)CBO
50
–
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO 50
–
Prelim ^{4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%}
Max Unit
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
nAdc
nAdc
mAdc
Vdc
Vdc
2014.0Ï´
www.willas.com.tw
Rev. 
3