SGFM101C-D2 Datasheet, PDF (2/3 Pages) Formosa MS – 10.0A Surface Mount Super Fast Rectifiers-50-600V

WILLAS
10.0A SURFACE MOUNT SUPER FAST RECTIFIERS -50V- 600V
1.0A SURFACE MOUNT SCHOTTKY BA_DR₂R_PI_AE_KR RE_PC_AT_CI_KF_AIE_GR_ES -20V- 200V
SOD-123+ PACKAGE
SGFM10^F1^MC¹-D²⁰2^-M+
THRU ^THRU
SGFM1F0M8C12-D020-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent p^Row^ae^trⁱⁿdis^gsi^apaⁿti^don^co^hffe^ars^{racteristic curves}
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
FIG.o1p-tiFmOizReWbAoaRrDd CspUaRcRe.ENT DERATING CURVE
• Low power loss, high efficiency.
12 _{• High current capability, low forward voltage drop.} 150
SOD-123H
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE 0C.1U46R(3.R7)ENT
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
10
• Guardring for overvoltage protection.
120
• Ultra high-speed switching.
8 _{• Silicon epitaxial planar chip, metal silicon junction. 90}
• Lead-free parts meet environmental standards of
6 _{MIL-STD-19500 /228}
• RoHS product for packing code suffix "G"
60
4 _{Halogen free product for packing code suffix "H"}
TJ=25 C
0.071(1.8)
0.056(1.4)
8.3ms Single Half
Sine Wave
JEDEC method
Mechanical data
30
2
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
0
0 ^{• Case}25^{: Mold}5^e0^{d plas}7^t5^{ic, S}1^O0^D0^-1231^H25 150
1
•
Term^Ain^Ma^Bls^IE:P^Nl^Tat^Te^Ed^Mte^Pr^Em^Rin^Aa^Tl^Us^R, s^Eo^,(ld^°e^Cr⁾able
per
,
MIL-STD-750
0.031(0.8)5Typ.
10
50
NUMBER OF CYCLES AT 60Hz
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
FIG. 3 - TYPICAL INSTANTANEOUR FORWARD
• Mounting _CP_Hos_Ai_Rtio_An_C:_TA_En_Ry_ISTICS
100 _{• WTeJ=ig25hOtC: Approximated 0.011 gram}
Dimensions in inches and (millimeters)
FIG. 4 - TYPICAL INSTANTANEOUS REVERSE
CHARACTERISTICS
100
SGFM101C-D2 , SGFM102C-D2
SGFM104C_M-D2_{AXIMUM RATINGS AND ELECTRICAL CHARACTERISTTJ=IC12S5°C}
Rat¹in⁰gs at 25℃ ambient temperature unless otherwise specified.
10
Single phSGaFsMe10h6aC-lDf 2wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
RATINGS
TJ=100°C
SYMBOL FM120-MH FM130-1MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Max⁰im^.1um RMS Voltage
SGFM108C-D2
VRMS
14
21_0.1 28 ^TJ=3²5^5°C 42
56
70
105
140
Maximum DC Blocking Voltage
pulse width=300us
VDC
20
Ma₀xi_.m₀₁um Average Forward Rectifie¹d^%C^duu^tr^yre^cyn^ct^le
IO
Peak
Forw⁰a^.4rd
S⁰u^.r⁶ge
Cu⁰r^.r⁸ent
8¹.3^.0ms
s¹in^.g²le
ha¹lf^.4sine-¹w^.a⁶ve
1.8
IFSM
superiImNpSoTseAdNoTn AraNteEdOloUadS(JFEODRECWmAeRthDodV)OLTAGE, VOLTS
30
40
50
60
80
100
150
200
1.0
0.01
0
20 40 60 80 100 120 140
30
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating_FT_IGem_{. 5}pe_-ra_Tt_Yur_Pe_ICRa_An_Lge_{JUNCTION CAPACITANC}T_EJ
Storage Temperature Range
TSTG
40
120
-55 to +125
-55 to +150
FIG. 6 -RTEESCTOCVEIRRCYUTITIMDEIAC_-GH₆RA₅AR_toMA_+CA1TN7E5DRRISETVIECRSE
140
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12_M0_{aximum Forward Voltage at 1.0A DC}
VF
Maximum Average Reverse Current at @T A=25℃
100
IR
Rated DC Blocking Voltage
@T A=125℃
80
NOTES:
1₆₀- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
40
50W
0.5010W
NONINDUCTIVE
NONINDUCTIVE
0.70
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
0.85
0.5
10
()
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
|
|
|
|
|
|
|
|
0.9
0.92
20
0
.01
.05 .1
.5 1
5 10
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
50 100
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
2012-06
2012-09
REVERSE VOLTAGE,(V)
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.