SESMF05C Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – 5-Line Transient Voltage Suppressor Array

WILLAS
SESMF0^F5^MC_T¹_H²_R⁰_U^-M+
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Electrical Parameter
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
SymFboelatures
Parameter
• Batch process design, excellent power dissipation offers
I_{PPbetter r}M_eva_ex_rsim_{e l}u_em_akaR_ge_ev_ce_ur_rs_ree_nP_{t a}e_na_dk_thP_eu_rmls_ae_l C_reu_sir_sr_te_an_nt_ce.
V^•_C^{Loopwtimpirzo}C_efil_bla^eom^saurp_dri^fn^aspcg^eaV_cmeo^o.lt^uaⁿg^tee^d@^appI_P^li_P^{cation in order to}
V_R^•_W^L_M^{ow pow}W^eo^r r^lok^sin^sg^{, h}P^ige^ha^ek^ffiR^cie^evⁿe^cyrs^. e Voltage
• High current capability, low forward voltage drop.
I_R^•
•
High
Guar
s
d
Maximum Reverse
urge capability.
ri^Vn^Rg^Wfo^Mr overvoltage prot
Leakage
ection.
Current
@
I_T• Ultra hiTghe-sstpCeeudrrsewnittching.
• Silicon epitaxial planar chip, metal silicon junction.
V_B•RLead
Breakdown Voltage @
-free parts meet environmen
t^Ia^Tl
stand
a
rds
o
f
I_{•F R}^M_o^I_H^L-_S^S_p^T_rF^D_oo_d^-1_urw_c⁹_t⁵a_f⁰_or⁰_rd_p^/C²_ac²u_k⁸r_inr_gen_cot _{de suffix "G"}
V_F^HalogenF^fo^rer^ew^pa^rord^duV^cto^folt^ra^pg^ae^ck@^ing I^c_F^{ode suffix "H"}
Electr^Mic^ea^cl C^hahⁿarⁱa^cc^at^le^dri^as^tt^aics
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H VBR
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Part Numbers^{Method 2}M⁰²i⁶n.
Typ.
• Polarity : Indicated by cathode band
Max.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
C
0.031(0.8) Typ.
I_T
V_RWM
I_R
Typ. 0v
Dimensions in inches and (millimeter^bs)^ias
• Mounting Position : An_Vy
V
V
mA
V
µA
pF
• Weight : Approximated 0.011 gram
SESMF05C
6.1
6.7
7.2
1
5.0
1
35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 V
VRMS
14
21
28
35
42
56
70
105
140 ^V
VDC
20
30
40
50
60
80
100
150
200 ^V
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
Figure 1 P_Te_Jak Pulse P-o5w5 teor+V12S5 Pulse Time
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09 ^2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.