SESDU5V0WB Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
FM120-M+
SESDU5V0W_TB_HRU
Tr₁a_.0n_As_Sie_Un_Rt_FAV_Co_Elta_Mg_Oe_UNS_Tu_Sp_Cp_Hre_Os_Ts_To_Kr_Ys_Bf_Ao_Rr_RE_IES_RD_RP_ECro_Tt_IFe_Ic_Et_Rio_Sn_{-20V- 200V}
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
ELECTRIC•ASLiliCcoHnAeRpAitaCxTiaElRpIlaSnTaICr cShi(pT,am=e2ta5l°sCiliucnolnesjusnoctthioenr.wise noted)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Symbol ^{• RoHS product f}P^ora^pr^aa^ckmⁱⁿe^gt^ce^or^{de suffix "G"}
I_PP
H_Ma_alo_xg_imen_uf_mree_Rp_er_vo_ed_ru_sc_et f_Por_ep_aa_kc_Pki_ung_lsc_eo_Cde_urs_ru_eff_nix_t "H"
Mechanical data
V_C
•
Clamping Voltage @ I_PP
Epoxy : UL94-V0 rated flame
retardant
V_RWM
I_R
• C^Wa^os^re^ki:ⁿM^go^Pld^ee^ad^k p^Rla^es^vt^eic^rs, ^eSO^VD^ol-^t1^a2^g3^eH
• T^Me^arm^ximina^ul^ms :^RP^ela^vt^ee^rd^st^eer^Lm^ei^an^ka^als^g,^es^Col^ud^re^rr^eaⁿb^tle^@pe^VrRMWMIL-STD-750,
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V_BR
Breakdown^MV^eo^thlt^oa^dge²⁰@²⁶I_T
I_T
• P_To_el_sa_tr_City_u:_rrI_en_nd_ticated by cathode band
I_F
• M_Foo_ru_wn_ati_rn_dg_CP_uo_rs_ri_eti_no_tn : Any
• Weight : Approximated 0.011 gram
V_F
Forward Voltage @ I_F
Dimensions in inches and (millimeters)
P_pk
Peak P^Mo^Aw^Xer^IMD^Uiss^Mipa^Rti^Ao^Tn^{INGS AND ELECTRICAL CHARACTERISTICS}
C ^{Ratings a}M^{t 2}a⁵x^℃. C^aa^mpa^bic^eiⁿta^t n^tec^me^p@^eraV^t_R^u=^re0^uaⁿn^led^ssf =^ot1^hM^erH^wz^{ise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
ELEC^FT^oR^{r c}IC^apA^aL^citC^ivH^e A^loR^adA^, C^deT^rE^atR^e I^cS^uT^rrI^eCⁿS^{t b}(^yT²a⁰=^%25°C unless otherwise noted)
Marking Code
RATINGS
Device
V_RWM
Maxi^Dm^eu^vm^icR^ee^*current Peak_MR_ae_rkv_ie_nr_gse Voltag⁽e^V)
Maximum RMS Voltage
Max
I_R
(^Sμ^YA^M) ^BOL
FM120-MH FM130-MH
12
V_BR
(V)
13
FM140-MH
14 ^IT
FM150-MH FM160-MH FM180-MH
MAX
15
16
V_C
(V)
18
FM1100-MH FM1150-MH
C (pF)@
10
115
FM1200-MH
120
@ V_VRWRMRM
2^@0 ^IT^(Not3^e0²⁾
4^（0 ^mA) 50 ^IPP^(A) 60 ^@Max8^I0PP
V_1R0=₀0V,f=1M₁H₅z₀
200
MaVxRMS
M¹⁴in
2_M1 _ax 28 _- 35 _- 42 _Max56
70 _Typ 105
140
SE^MS^aD^xU^im5^uV^m0W^DCB^{Blocking Volt}A^agE^e
5
*Othe^Mr^av^xio^mlt^ua^mge^As^vea^rav^ga^eil^Fa^ob^rl^we^au^rdp^Ron^ecr^tie^fiq^edue^Cs^ut^r.^rent
1 ^VDC
IO
2₅0_.4
30_9.4 40 ₁ 50 ₁ 60 ₁₀ 80
1.0
100 _0.5 150
200
2. V_B^P_R^eais^k m^Foe^rwa^as^ru^d r^Se^ud^rgw^{e C}ith^urra^enp^t u^8.l³se^mste^ssⁱⁿt^gc^leu^hr^ar^le^f n^sit^neI_T^-wa^at^vean aIFmSMbient temperature of 25°C.
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
RΘJA
CJ
TJ
TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.