SESD5ZXXV Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – T ransient Voltage Suppressors for ESD Protection

WILLAS
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FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Electr_Fic_ea_al_tuP_ra_era_smeter
• Batch process design, excellent power dissipation offers
Symb^bo^etl^{ter reverse leakage cur}P^reaⁿr^ta^am^ndet^the^er^{rmal resistance.}
• Low profile surface mounted application in order to
I_PP^optimizeM^ba^ox^ai^rm^d u^spm^acR^ee^. verse Peak Pulse Current
• Low power loss, high efficiency.
V_{•CHigh cur}C_rela_nm_{t c}p_ai_pn_ag_biV_lito_y,lt_la_og_we_fo@_rwaI_{PrdP voltage drop.}
V_R^•_W^H_M^{igh sur}W^geo^crk^ai^pn^ag^biP^lite^y.ak Reverse Voltage
•
I^•_R
•
Guardrin_Mg_af_xo_ir_mov_ue_mrvo_Rlta_eg_ve_ep_rsro_etec_Lt_eio_an_k. _{age Current}
SUilltircaohnige^VhpR-itsWap^Mxeiaeldpslawnitacrhcinhgip. , metal silicon junction.
@
I•_TLead-freTeepsatrCtsumrreeent tenvironmental standards of
MIL-STD-19500 /228
V_{•BRRoHS pr}B_odr_ue_ca_t k_fod_ro_pw_acn_kinV_go_clt_oa_dg_ee_su@_ffixI_"TG"
I_F^HalogenF^fro^eerw^pa^ror^dd^ucC^t u^for^rr^pe^an^ct^{king code suffix "H"}
Mechanical data
V_{• F E}
p
o
xy
:
Forward
UL94-V0
r^Vat^oe^ld^tafl^ga^em^@e re^It^Fardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
Elect•riTceramlinCahls a:Prlaatcedteterrimsitniaclss,
,
sRoaldtinegrasbalte2p5e°Cr MaImLb-SieTnDt t-e7m5p0erature
unless
otherwise
specified.VF
=
0.9V
at
IF
=
10mA
Part Numbers ^{Method 2026} _VBR
• Polarity : Indicated by cathode band
• Mounting Position : Any
I_T
Min. Typ. Max.
• Weight : Approximated 0.011 gram
V_RWM
V_F
C
Dimensions in inches and (millimeters)
I_R
Max.
I_F
Typ. 0v
bias
MAXIMU_VM RATIN_VGS AND_VELECT_mRI_ACAL CHA_VRACTER_µIS_ATICS _V
mA
pF
Ratings at 25℃ ambient temperature unless otherwise specified.
SSingEleSpDh5asZe3hVa3lf wave, 650.H0z, resist6iv.e0of induc7tiv.0e load. 1
3.0
1
1.25
200
35
For capacitive load, derate current by 20%
SESD5Z5V
6.0
6.6
RATINGS
Mar^Ski^Eng^SC^Do⁵de^Z7V
7.5
8.1
7.1
1
5.0
1
1.25
200
30
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
8.6
1 ₁₂
7₁.₃0
14 ¹ 15 ^1.21⁵6
18²⁰⁰ 10 ²⁵115 120
Ma_Sxi_Em_Sum_DR₅e_Zc₁ur₂re_Vnt Peak R₁e₃v_.e₅rse Vol₁ta₄g_.e₂
15.0^VRRM 1 ²⁰ 12³⁰.0
40 ₁ 50 _1.26₅0
80₂₀₀ 100 ₂₅150
200
M_*Sax_uim_rgu_em _cR_uM_rS_reV_no_tlta_wge_{aveform per Figure 1.} VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
M^1.axim^Vu^Bm^R
is measured
Average Forward
with a pulse test
Rectified Current
VDC
curren_It_OI_T
at
20
30
an ambient
40
50
temperature of
25℃⁶．⁰
1.0
80
100
150
200
Peak Forward Surge Current 8.3 ms single half sine-wave
T^sy^upp^eri^imc^pa^osl^eC^{d o}h^{n r}a^atr^ea^{d l}c^oat^de^(Jr^Ei^Ds^Et^Cic^ms^ethod)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1. Pulse Waveform
Fig2.Power Derating Curve
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.