SESD5Z5C Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
FM120-M+
SESD5Z5C_THRU
Tr₁a_.0n_As_Sie_Un_Rt_FAV_Co_Elta_Mg_Oe_UNS_Tu_Sp_Cp_Hre_Os_Ts_To_Kr_Ys_Bf_Ao_Rr_RE_IES_RD_RP_ECro_Tt_IFe_Ic_Et_Rio_Sn_{-20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Electric^bea^ttl^eP^{r r}a^evr^ea^rm^se e^let^ae^kr^{age current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
Sym^•b^Lo^ol^{w power loss, high} P^efa^fir^ca^iem^nce^yt^.er
• High current capability, low forward voltage drop.
I_PP^•
•
High s^Mur^ag^xe^imca^up^mability^R. ^{everse Peak}
Guard^Cri^un^rg^refoⁿr^tovervoltage protection.
Pulse
V_C^{• Ultra h}C^igla^hm^-sp^pein^eg^d V^swoⁱl^tt^ca^hgⁱⁿe^g@^. I_PP
• Silicon epitaxial planar chip, metal silicon junction.
V_RW•ML
e
a
Working
d-free parts
Peak Reverse Voltage
meet environmental standar
d
s
of
I_R•
MIL-S_MTD_a-_x1_im95_u0_m0 /2_R28_everse
RoHS _@prod_Vu_Rc_Wt f_Mor packing code
Leakage
suffix "G"
Current
I_TM^H_e^al_c^og_h^eTⁿ_ae^fs^r_n^et^e_iC_c^pu^r_a^or^dr_le^u_d^cn^tt_a^fo_t^r
packing
a
code
suffix
"H"
V_{B•REpoxy}B_:r_Ue_La₉k₄d_-o_Vw₀ n_raV_teo_dlt_fa_lag_me_e@_retaI_Trdant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Electr^•ic^Poa^lal ^rC^ityh^: a^Inr^da^icc^at^tee^dr^bis^y t^ci^ac^ths^odR^ea^btin^agⁿs^dat
25°C
ambient
temperature
unless
Dimensions in inches and (millimeters)
otherwise specified.VF = 0.9V at IF = 10mA
• Mounting Position : Any
V_BR
• Weight : Approximated 0.011 gram
Part Numbers
Min. Typ. Max.
I_T
V_RWM
I_R
V_F
Max.
I_F
C
Typ. Typ. 0v bias
MAXIMUM R_VATINGS _VAND EL_VECTRIC_mA_AL CHAR_VACTERIS_µT_AICS _V
mA
pF
Ratings at 25℃ ambient temperature unless otherwise specified.
Sing^Sle^Ep^Sha^Dse^5Zha⁵lf^Cwave, 60Hz, r⁵e^.s⁶istive of ⁶in^.d⁷uctive lo⁷a^.8d.
1
5.0
1
1.25 200
30
*SFourrgcaepaccuitrivrenlotawd,adveeraftoercmurpreenrt bFyig2u0%re 1.
1. V_BR is measureRdATwINithGSa pulse test curreSnYtMIB_TOaLt FaMn12a0-mM^Hb^Fie^Mn¹³t⁰t^-Me^Hm^Fp^Me¹⁴r⁰a^-Mtu^Hr^Fe^Mo¹⁵f⁰2^-M5^H℃^FM．^{160-MH FM180-MH FM1100-MH FM1150-MH} FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
T^My^ap^ximic^umal^ReC^cuh^rra^enr^ta^Pec^at^ke^Rr^ei^vs^ert^si^ec^Vs^oltage
Maximum RMS Voltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
80
100
150
200
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHFZigan1d.aPppulielsd erevWersaevveolftaogremof 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig2.Power Derating Curve
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.