SCS520CS-30T5G Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – 100mA Surface Mount Schottky Barrier Rectifiers - 30V

WILLAS
FM120-M+
THRU
100m₁A_.0S_Au_Sr_Ufa_Rc_Fe_ACM_Eo_Mu_On_Ut _NS_Tch_So_Ct_Ht_Oky_TTB_Ka_Yr_Bri_Ae_Rr _RR_Ie_Ec_Rti_Rfi_Ee_Cr_Ts_IF-_I3_E0_RV_{S -20V- 2}^S₀₀^C_V^S520CS-3_F⁰_M^T₁⁵₂^G_00-M
SOD-923_SOP_Da_-c₁k₂a₃₊ge _PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
E^•le^Loc^opt^wtr_imi^pc_irza^oel^fⁱc_bleoh^saa^urr_dra^fasc_pct^eae_cmr_eis^{o. u}tiⁿc^t^ec^du^ar^pv^pe^lis^c^a(^tT^ioaⁿ=ⁱ2ⁿ5^oOrC^de)^{r to}
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• G¹⁰u⁰⁰ardring for overvoltage protection¹⁰.⁰⁰⁰⁰⁰
• U₁l₀t₀ra hig_Tah₌₁-₂s₅p_℃eed switching.
100000
• Silicon_Tae₌₇p_5℃itaxial planar chip, metal silicon junction.
10
10000
• Lead-free parts meet environmental standards of
MI₁L-STD-19500 /228 _Ta=-25℃
1000
• RoHS product for packing code suffix "G"
Ha^0.1logen
free
product
Ta=25℃
for packing
code
suff¹i⁰x⁰
"H"
M0e.01chanical data
10
Package outline
SOD-123H
Ta=125℃
100
Ta=75℃
Ta=25℃
10
Ta=-25℃
0.146(3.7)
0.130(3.3)
f=1MHｚ
• E0.0p01oxy : UL94-V0 rated flame retardant 1
0 100 200 300 400 500 600
0
10
20
• Case : M_Fo_Ol_Rd_We_ARd_Dp_Vl_Oa_Ls_TAti_Gc_E,_：VS_F(O_mVD₎ -123H
REVERSE VOLTAGE：VR(V)
VF-IF CHARACTERISTICS
VR-IR CHARACTE,RISTICS
• Terminals :Plated terminals, solderable per MIL-STD-750
1
30
0
5
10
15
0.031(0.8) Typ. REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
20
0.031(0.8) Typ.
Method 2026
370
• Polarity : Indicated by cat_Th_a=o₂₅d_℃e band
1000
VF=10mA
900
• M³o⁶⁰unting Position : Any n=30pcs
800
700
• W₃₅e₀ight : Approximated 0.011 gram ₆₀₀
Ta=25℃
VR=10V
n=30pcs
20
Dimensions in inches and (millimeters)
19
Ta=25℃
18
f=1MHz
VR=0V
17
n=10pcs
16
500
15
340 MAXIMUM RATINGS AND E400LECTRICAL CHARACTERIST14ICS
Ratings at 25℃ ambient temperature unless other³w⁰⁰ise specified.AVE:100.5nA
330
200
Single
phase
half
wave,
60Hz, resistive
AVE:338.8mV
of
inductive₁₀₀load.
For capaci₃t₂iv₀e load, derate current by 20%
0
13
12
AVE:15.94pF
11
10
Marking Code
RATINGS
VF DISPERSION MAP
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
IR DISPERSION MAP
Ct DISPERSION MAP
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200
Maximum RM²⁰S Voltage
10 _VRMS
14
21
28 ¹⁰ 35
42
56
70
105
140
Maximum DC Blocking Voltage _Ifsm
1cyc
15
Maximum Average Forward Rectified C_8.3u_mr_srent
VDC
2I0fsm
30
40
50
IO
8.3ms 8.3ms
1cyc
60
1.0
I⁸fs⁰m
100
t
150
200
Peak Forward10Surge Current 8.3 ms single half sine-wave 5 _IFSM
superimposed on rated load (_AJE_VED_:3E_.9C_0Amethod)
Typical Therm⁵al Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
Operating Tem⁰ perature Range
Storage Temperature Range
IFSM DISRESION MAP
CJ
0 _TJ
1
TSTG
-55 to +125
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
5
30
40
120
0
-55 to +150
1
10
100
- 6_T5_IMt_Eo_:t(m+_s1₎ 75
IFSM-t CHARACTERISTICS
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum F₁₀o₀r₀ward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
0.1 _VF
Rth(j-a)
@T A=25℃ _{0.08 IR}
@T A=125℃
D=1/2
0.50
0.02
0.70
0.5
0.015
10
0.85
0.9
0.92
Rth(j-c)
0.06
NOTES:
1-
Measured
100
at 1
MHZ
and
appl^Mie^oud^ntr^ee^dv^oeⁿrs^ee^poxv^yo^blt^oa^ag^rde
of
4.0
V0.D04C.
Sin(θ＝180)
DC
IM=10mA
IF=100mA
2- Thermal Resistance From Junction to Ambient
0.02
1ms ^time
10
0.001
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.01
0.005
0
0
DC
Sin(θ＝180)
D=1/2
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.