MURS160-FN3 Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – 1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V

WILLAS
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER_{mSRFOENDC--T31I22F3I3}E₊R_PSP_A-A_C2C0_KVK_A-A2_GG0EE0V
FM120-M+
THRU
MURS_F1_M60₁-₂F₀N₀3_-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and the_Rrm_aa_tl_inre_gsis_ata_nn_dce._{characteristic curves SOD-123H}
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
FIG.2-TYP0.I1C46A(3L.7)FORWARD CURRENT
0.130(3.3)
0.012(0.3) Typ.
DERATING CURVE
• High surge capability.
• Guardring for overvoltage protection.
FIG.1-TYPICAL FORWARD
• Ultra high-speed switching.
CHARACTERISTICS
• Silicon e₁₀pitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
1.2
0.071(1.8)
1.0
0.056(1.4)
0.8
MIL-STD-19500 /228
• RoHS pro¹duct for packing code suffix "G"
0.6
Halogen free product for packing code suffix "H"
0.4
Mecha^0.1nical data
0.2
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
0.01
• Case : Molded plastic, SOD-123H
,
• Termin0a.0l0s1:Plated terminals, solderable per MIL-STD-750
0_M.2_eth0_o.4_{d 2}0₀.6₂₆ 0.8 1 1.2 1.4 1.6 1.8
y _{• Polarity : Indicated by FcOaRthWoAdReDbVaOnLTdAGE,(V)}
r _{• Mounting Position : Any}
0
0
0.031(0.8) Typ.
25 50 75 100 125 150 175
0.031(0.8) Typ.
AMBIENT TEMPERATURE (°C)
Dimensions in inches and (millimeters)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
• Weight : Approximated 0.011 gram
a ₅₀
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
in⁴⁰
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive^Flo^IGad^.3,^-d^Te^Era^Ste^T c^Cu^IRrre^Cn^Ut^Ib^Ty^D2^I0^A%^{GRAM AND REVERSE}
30
8.3ms Single Half
R_RE_AC_TIO_NV_GE_SRY
TIME
CHARACTE_SYR_MIS_BT_OI_LCS_FM120-MH
FM130-MH FM140-MH
FM150-MH
FM160-MH
TJ=25 C
FM180-MH
FM110^S0ⁱⁿ-^eM^WH^avF^eM1150-MH
FM1200-MH
UNIT
20
lim ^{Marking Code}
50W
NONINDUCTIVE
10W
NONINDUCTIVE
12
13
14
15
16
JEDEC method
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
20
30
40
50
60
10
VRMS
14
21
28
35
42
80
100
150
200 Volts
56
70
105
140 ^Volts
(+)
e _{Maximum DC Blo25cVkdicng VoltaDg.Ue.T.}
(approx.)
Maximum Averag₍ e₎ Forward Rectified Current
r _1W
OSCILLISCOPE
Peak Forward Surge Current 8^NIN.3^ODNUm^-Cs_TIVs_Eingle half s(NinOeTE-w1)ave
()
VDC PULSE 20
GENERATOR
IO ^{(NOTE 2)}
(+)
IFSM
30 ₀
40
1
50
60
80
100
150
200
5 _1.0 10
50
100
NUMBER OF CYCLES AT 60Hz
30
Volts
Amps
Amps
P _{superimposed on rated load (JEDEC method)}
Typical Therma^Nl ^OR^Te^ESs^:is^1.t^Raⁱn^sec^Te^im(^eN^{= 7}oⁿt^se^m2^ax)^{., Input Impedance= 1 megohm}R^.22Θ^pJ^F.A
40
℃/W
Typical Junction Capa^2.c^Riⁱt^sa^en^Tic^me^e=(¹N⁰ⁿo^ste^ma1^x.)^{, Source Impedance= 50 ohms.}CJ
FIG.5-TYPICAL JU¹N²⁰CTION CAPACITANCE
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
70
- 65 to +175
℃
trr
CHA+R0.5AACTERISTICS |
|
Maximum Forward Voltage at 1.0A DC
|
|
Maximum Average Reverse Current at
0
@T^||A=25℃
Rated DC Blocking Voltage
@T^||A=125℃
-0.25A
NOTES:
60
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
500.50
0.70
0.85
0.9
0.92 Volts
IR
40
0.5
10
mAmps
30
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
20
2- Thermal Resistance From Junction to Ambient
-1.0A
10
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05 .1
.5 1
5 10
50 100
REVERSE VOLTAGE,(V)
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.