MMBD4148 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

WILLAS
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SOD-123+ PACKAGE
FM120-M+
MMBD4148^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• ₃H₀₀igh surge capability.
• Guardring for overvoltage protection.
0.146(3.7)
0.130(3.3)
Reverse Characteristics
1000
• ₁U₀₀ltra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
300
• Lead-free parts meet environmental standards of
M³⁰IL-STD-19500 /228
100
• RoHS product for packing code suffix "G"
H¹⁰alogen free product for packing code suffix "H"
T_a=100℃
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
30
• E³poxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
1
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
0.031(0.8) Typ.
T_a=25℃
0.031(0.8) Typ.
Method 2026
0.3
• Polarity : Indicated by cathode band
3
Dimensions in inches and (millimeters)
• M^0.10o_.0unting Posi₀t_.i₄on : Any _0.8
1.2
1.6
• Weight : Approx^Fim^ORa^Wte^Ad^RD0^V.0^O1^LT1^Ag^Gr^Eam^VF ^(V)
1
0
20
40
60
80
REVERSE VOLTAGE V_R (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, deratCeacpuarcreitnatnbcye 2C0h%aracteristics
Power Derating Curve
1.4
400
RATINGS
SYMBTO_aL=2F5℃M120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
f=1MHz ₁₂
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum ¹R^.3MS Voltage
VRRM
20
30
40
50
60
VRMS
14
21
300 ₂₈
35
42
80
100
150
200 Vo
56
70
105
140 ^Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
1.2
200
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Jun^1.c¹tion Capacitance (Note 1)
CJ
100
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
1.0
0
0
CHARA⁵CTERISTICS ¹⁰
S¹⁵YMBOL FM120²⁰-MH FM130-MH FM1⁰40-MH FM²1⁵50-MH FM⁵⁰160-MH F⁷M⁵ 180-MH ¹F⁰M⁰ 1100-MH¹²⁵FM1150-¹M⁵⁰H FM1200-MH UN
Maximum Forward Voltage at R1E.0VAERDSCE VOLTAGE V_R (V) VF
0.50
A₀M_.7B₀IENT TEMPERATURE_0.8T_5a (℃)
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-12
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.