FFM301 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)

WILLAS
3.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER R_SE_MC_CTI_PF_AIE_CR_KS_A-2_G0_EV- 200V
FM12
FFM301
THRU
FFM307
TH
FM12
RATING
AND
CHARACTERISTIC
CURV^SE^OS^D( ^-F¹F²M³3⁺01
PACKAGE
THRU FFM307
)
Pb Free
Features
• Bbeatttcehr^Fp^I_r^G_er^.ov¹cee^-_rs^Tse_DYs_EPldeRICea_As^A_kTi^L_agINFgnGOe, ^Re_Cc^Wx_UucRr^Aer_VRelEl^D_netn^C_at^U_np^R_do^Rwt^E_h^Neer^T_rdmisasl irpeastiisotnanocffee.rs
•
5
Low
profile
surface
mounted
application
in
order
to
200
Package outline
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
SOD-123H
optimize board space.
•
4
Low
power
loss,
high
efficiency.
100
• Hig₃h current capability, low forward voltage drop.
• High surge capability.
50
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Gu₂ardring for overvoltage protection.
• Ultra hiSginhg-lesPpheaseed switching.
• Sil₁icon ^HRe^aep^lsfii_sWt_tia^avevx^eoia^{6r 0}l^Hp^zlanar chip, metal silicon junction.
• Lead-fr^Ie^nde^ucp^tiva^er^Lt^os^admeet environmental standards of
30
8.3ms Single Half Sine-Wave
(JEDED Method)
20
0.071(1.8)
0.056(1.4)
MI₀L-STD-19500 /228
• RoH⁰S pro²d⁵uct⁵f⁰or p⁷a⁵cki¹n⁰g⁰co¹d²e⁵ su¹⁵ff⁰ix "¹G⁷"⁵
Halogen ^Afr^Mee^BIp^Er^No^Tdu^Tc^Et^Mfo^Pr^Ep^Ra^Ac^Tk^Uin^Rg^Ec^, o⁽ de⁾ suffix "H"
10
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
Mechanical data
FIG. 3 - TYPICAL INSTANTANEOUS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
0.040(1.0)
• Epoxy : UFLO9R4W-VA0RDraCteHdARflAaCmTeERreIStTaIrCdSant
20
200
• C₁a₀se : Molded plastic, SOD-123H
1,00
• Terminals :Plated terminals, solderable per MIL-STD-750
3.0
Method 2026
60
40
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
• P1o.0larity : Indicated bTJy=c2a5¢tJhode band
Pulse Width=300uS
Dimensions in inches and (millimeters)
20
• M₀o_.3unting Position : ¹A^%n^Dy^{uty Cycle}
10
• Weight : Approximated 0.011 gram
0.1
TJ = 25
6
4
.03
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
Ratings at 25℃ ambient temperature unless otherwise specified.
Single pha^.0s¹e_0.h₄alf ₀w_.6ave₀,_.860H_1.z₀, re₁s_.2istiv₁e_.4of i₁n_.6duc₁t_.i₈ve load.
1
.1 .2 .4
1.0 2 4
10 20 40 100
For capacitivIeNlSoTaAdN, TdAeNraEtOe UcSurFreOnRtWbyAR2D0%VOLTAGE, (V)
REVERSE VOLTAGE, ( V )
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115
80
100
150
Maximum RMS Voltage
FIG. 5 - TEST CIRCUIT DIAVGRRMASM AND14REVERS2E1RECOVE2R8Y TIME 3C5HARACT4E2RISTIC 56
70
105
Maximum DC Blocking Voltage ₅₀
NONINDUCTIVE
Maximum Average Forward Rectified Current
10
VDC
NONINDUCTIVE
IO
20
30
40
+0.5A
50
trr
60
80
1.0
100
150
Peak
Forward
Surge
Current
8.3
ms
single
(+)
half
sDi.nUe.T-wave
IFSM
(-)
0
30
superimposed on rated load (JEDEC2m5 eVdthc od)
PULSE
GENERATOR -0.25A
Typical Thermal Resistance (Note ⁽2^a)^{p( p- r)ox)} ₁
Typical Junction Capacitance (Note 1)
NON-
RΘJA
OSC_C(NILOJLTOES1C)OPE
(NOTE 2)
(+)
40
120
Operating Temperature Range
INDUCTIVE
TJ
-55 to +1_-2_1.5_0A
-55 to +150
Storage Temperature Range ^{NOTES:1 Rise Time = 7ns max. Inpu}T^{t I}S^mT^peG^{dance =}
1 megohm. 22pF.
1cm S50E/T10T0IMnsE_-/cBm6A₅SE_toFO₊R₁₇₅
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
2_M0_ax1_i2_m._u1_m2_Forward
CHARACTERISTICS
Voltage at 1.0A DC
WILLAS ELECTRONIC CORP. ^{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-M}
VF
0.50
0.70
0.85
0.9
Maximum Average Reverse Current at @T A=25℃
0.5