VGFM24A-FN5 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – 90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-24V

WILLAS
90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-24V
1.0A SURFACE MOUNT SCHOTTKY BARRIER_{mSRFOENDC--T51I22F33IE+}R_PS_AP-AC2C0_KVK_A-A_G2G0_EE0V
FM120-M+
VGF_FM_M2₁^T4₂^HA₀^R-₀^UF_-MN5₊
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Features _{• Low power loss, high efficiency.}
• Hi•ghSctaurnrednot fcfavpoalbtialigtye, l:o2w4fVorward voltage drop.
• Hi_•gh_Us_nu_ir_dg_ie_rec_ca_tp_ia_ob_nil_ait_ly.
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
mFN-523
• G_•ua_Ord_pri_en_rg_af_to_inr o_gv_Ter_jv_mol_ata_xg_:e₁p₅r₀ote_°Cction.
• Ultra high-speed switching.
•
• ESD-protection acc. IEC 61000-4-2
Silicon epitaxial planar chip, metal silicon junction.
•
±30 kV contact
Lead-free parts meet
discharge
environmental
standards
of
MIL^±-S³T⁰D^k-1^V9^a50^ir0^d/2^is2^c8^harge
0.028(0.70) 0.071(1.8) 0.013(0.33)
0.020(0.50) 0.056(1.4) 0.009(0.23)
• Ro^•H^mS ⁱpⁿroⁱ d^Fu^lc^at^tfo^Nr ^opa^-c^Lk^ein^ag^dco^Pd^ae^cs^ku^affi^gx ^e"G^. "
Ha_•lo_Gge_lan_sfr_see_pp_ar_sod_su_ivct_af_to_er _dpa_cc_hki_in_pg _jc_uo_nde_cts_iu_of_nfix_. "H"
Me_•c_Ph_b-a_Fn_rei_ec_pa_al_cd_kaa_gt_ea_{is available}
0.040(1.0)
• Epo_Rxy_o:_HU_SL9_p4_ro-V_d0_ucra_t t_fe_od_r f_pla_am_cke_inre_gta_cr_od_da_ent_{suffix ”G”}
0.024(0.6)
• CasHe a: Mlooglednedfrpeleasptrico,dSuOctDf-o1r2p3aHcking code suffix “H”
•
Te^•r
m^Pi^on^la^al^rs^it:^yP^:la^Ct^oe^ld^orte^br^amⁿi^dna^dl^esⁿ, ^os^to^el^sde^cr^aa^tb^hole^dp^ee^erⁿM^dIL
,
-STD-750
Method 2026
y _{• Polarity : Indicated by cathode band}
r _{• MAounptipnglPicosaititoino: Annsy}
0.031(0.8) Typ.
0.067(1.70)
0.059(1.50)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
0.028(0.70)
0.020(0.50)
• W_•ei_Mgh_Pt₃: A_Pp_lap_yro_ex_ri_smated 0.011 gram
a _{• DigMitaAlXCIaMmUeMraRs aAnTdINcaGmScAorNdDersELECTRICAL CHARACTERISTICS Dimensions in inches and (millimeters)}
in ^{Ratings at 2•5L℃CDamBbaiecnktlitgehmtperature unless otherwise specified.}
Single phas•eMhoalbf iwleavHea, 6n0dHsze,trsesistive of inductive load.
Mechanical data ^{For capacit}_•^iv_P^e _D^lo_A^{ad, derate current by 20%}
• LED mo^Rd^Au^Tle^INs^GS
lim ^{Marking Code}
Maximum Re^•c^Durⁱr^gen^itt^aP^le^Ta^Vk R^aeⁿv^der^Sse^eV^t-o^tl^ota^pge^Boxes
• ^{SYMBOL FM120-MH FM130-MH FM140-MH FM}E¹p⁵⁰o^-Mx^Hy:^FU^ML¹⁶9⁰4^-M-^HV0^FMr¹a⁸t⁰e^-Md^Hf^Fla^Mm¹¹e^00-r^Me^Hta^Fr^Md¹a¹⁵n⁰t^{-MH FM1200-MH UNIT}
12
13
VRRM
20
30
14
40
•
15
C₅a₀ se
:
16
m₆F₀N-523
18
80
10
100
115 120
150
200 Volts
Maximum RM^• S^OV^thol^eta^rg^Pe ^{ortable Electronic Compon}V^eRⁿM^tS^s 14
21
28 ^{• M}35^ounting42^Position56^{: Any} 70
105
140 ^Volts
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Maximum ratings ^r _Peak
Forward
Surge
Current
8.3
ms
single
half
sine-wav⁽e^at
T_A=25^oC
IFSM
unless
otherwise
noted)
30
P _{superimposed on rated load (JEDEC method) Rating}
SYMBOL
VALUE
UNIT
Amps
Typical Therm_Pa_el R_ae_ks_Pist_ua_ln_sc_ee _P(N_oo_wte_e2_r) _{(tp=10/1000us} R_WΘ_aJA_veform)
Typical Junction Capacitance (Note 1)
CJ
Operating Tem^Pp^ee^ara^ktu^Pre^ulR^sa^eng^Ce^{urrent (tp=10/1000us} T^WJ ^aveform)
-55 to +125
Storage TempEeSraDturiemRmanugneity (Contact discharge aTcScT.GIEC 61000-4-2)
(Air discharge acc. IEC 61000-4-2)
P _PP
40
120
90
W
IPP
2._-4_{55 to +150}
A
- 65 to +175 _±30
kV
V _ESD
±30
kV
℃/W
PF
℃
℃
Opera^Ct^Hin^Ag^Rt^Ae^Cm^TEp^Rer^ISa^Ttu^ICre^S
Maximum Forward Voltage at 1.0A DC
Storage temperature
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-M_TH_J FM160-MH FM_-1₅8₅0-_~M₊H₁F₅M₀1100-MH FM115^o0_C-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
T _STG
0.5 ^-55~+150
o_C
mAmps
10
NOTES:
Electrical characteristics ^{1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.}
(at T_A=25^oC unless otherwise )
2- Thermal Resistance From Junction to Ambient
PARAMETER
TEST CONDITIONS
SYMBOL
Reverse Stand Off Voltage
VRWM
Reverse Leakage Current
V_RWM = 24.0V
IR
Reverse Breakdown Voltage
I_T= 1.0mA
VBR
Clamping Voltage
2012-06
I_PP = 2.4 A , tp=10/1000us
VC
MIN. TYP. MAX. UNIT
-
-
24.0
V
-
-
1.0
uA
26.7
-
29.5
V
-
-
38.4 V
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.