VGFM11A-FN5 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – 90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-11V

WILLAS
90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-11V
1.0A SURFACE MOUNT SCHOTTKY BARRIER_{mSRFOENDC--T51I22F33}IE₊R_PS_AP-AC2C0_KVK_A-A2_GG0EE0V
FM120-M+
VGFM1^T1^HA^R-F^UN5
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
op_Ftim_ei_aze_tb_uoa_rr_ed s_space.
Package outline
• Lo_•w_Sp_to_aw_ne_dr_olo_ffss_v,_oh_ltig_ah_ge_ef_:f₁ic₁ie_Vncy.
• High current capability, low forward voltage drop.
•
• Unidirectional
High surge capability.
• G^•ua^Ord^pr^ein^rg^af^toⁱⁿr ^gov^Te^jr^mvo^alt^xa^:g¹e⁵p⁰ro^°t^Cection.
0.146(3.7)
m^0.F¹³N⁰⁽³-^.35⁾ 23
0.028(0.70)
0.012(0.3) Typ.
0.013(0.33)
• Ul^•tr^Ea ^Shi^Dgh^-p-s^rp^oe^te^ed^ctsⁱw^onitc^ah^cin^cg^..^{IEC 61000-4-2}
• Silic^±o³n⁰e^kp^Vita^cx^oiaⁿl ^tp^ala^cn^t a^dr^isc^ch^hip^a, ^rm^ge^etal silicon junction.
0.020(0.50)
0.07⁰1^.0(1⁰.⁹8)^(0.23)
0.056(1.4)
• Lea^±d-³f⁰re^ke^Vpa^arⁱt^rs^dm^ise^ce^ht e^an^rv^gi^eronmental standards of
M•ILm-SiTnDi F-1la95t 0N0o/-2L2e8ad Package.
• Ro_•H_GS_lp_ar_so_sdu_pc_at f_so_sr _ip_va_ac_tk_ein_dg _cco_hd_ipe s_juu_nffi_cx_t"_iG_o"_n.
Ha_•lo_Pg_ben_-Ffr_re_ee_epr_po_ad_cuc_kt_afo_gr_epa_isck_ain_vg_ac_io_ld_ae_bs_leuffix "H"
Mechanical data
RoHS product for packing code suffix ”G”
0.040(1.0)
• Epo_Hxy_al:_oU_gL_e9_n4-_fV_re0_era_pt_re_od_df_ula_cm_t e_for_ret_pa_ard_ca_kn_int _{g code suffix “H”}
• Ca_•s_Pe_o:_lM_aro_itl_yd_:e_Cd _op_ll_oa_rs_bti_ac_n, _dS_dO_eD_n-_o1_te2_s3H_{cathode end}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Applications ^y _{• Polarity : Indicated by cathode band}
0.031(0.8) Typ.
0.067(1.70)
0.059(1.50)
0.024(0.6)
0.031(0.8) Typ.
0.028(0.70)
0.020(0.50)
Dimensions in inches and (millimeters)
r _{• Mo•uMntPin3g Polasyiteiorns: Any}
a _{• We•igDhitg:itAaplpCroaxmimeartaesd a0n.0d11cagrmamcorders}
Dimensions in inches and (millimeters)
• LC_MD_AB_Xa_Ic_Mk_Ulig_Mht_{RATINGS AND ELECTRICAL CHARACTERISTICS}
Mec^{in Ratings at 2•5M℃oabmilbeieHnat tnedmspeertasture unless otherwise specified.}
hanical data _Single
phas_•e
half wave,
PDA
60Hz,
resistive
of
inductive
load.
For capacitive load, derate current by 20%
• Epoxy:UL94-V0 rated flame retardant
• LED modules
lim ^RATINGS
• ^{SYMBOL FM120-MH FM130-MH FM}C¹a⁴⁰s^-Me^H:^Fm^M1F⁵⁰N^-M-^H52^FM3^{160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking Cod^•e ^{Digital TV and Set-top Boxes}
12
13
14
15
16
18
10
115 120
Maximum Re_•cu_Orr_te_hnt_eP_re_Pak_orR_te_av_ber_ls_ee_EV_lo_elt_cag_tre_{onic Comp}V_oR_nR_eM_nts 20
30 ^{• M}4^o0^unting50^Positio6ⁿ0 ^{: Any} 80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum ratings ^{r Maximum Average Forward Rectified Current} (at T_A=2^IO5^oC unless otherwise noted)
1.0
Amps
Peak Forward Surge Current 8.3 ms single half_Rs_ain_te_in-w_gave _IFSM
P _{superimposed on rated load (JEDEC method)}
SYMBOL
30 ^VALUE
UNIT
Amps
Peak Pulse Power _{(tp=10/1000us Waveform)}
Typical Thermal Resistance (Note 2)
RΘJA
P _PP
90
40
W
℃/W
Typical Junc^Ptio^en^aC^ka^Pp^uac^lsit^ean^Cce^u(^rN^reoⁿte^t 1)^{(tp=10/1000us W}C^aJ^veform)
IPP
120 ^5.0
A
PF
Operating TEemSpDeriamtumreuRnaintyge(Contact discharge acc.TIJEC 61000-4-^-2⁵)^{5 to +125}
±30 ^{-55 to +150} kV
℃
Storage Temperature Range ^{(Air discharge acc. IE}T^CST⁶G^1000-4-2)
V_{ESD - 65 to +17±530}
kV
℃
Operating temperature
CHARACTERISTICS
Maximum Fo^Srw^toa^rr^ad^gV^eol^tta^eg^me^pa^et ^r1^a.0^tuA^rD^eC
T_J
-55~+150
o_C
SYMBOL
VF
FM120-MH
FM130-MH FM140-MH
0.50
FM150-MH FM160-MH FM180-MH FM1100-MH
T _STG0.70
-55~+15_0.0₈₅
FM1150-MH
o_C0.9
FM1200-MH
0.92
UNIT
Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmps
10
NOTES: Electrical characteristics (at T_A=25^oC unless otherwise )
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
PARAMETER
TEST CONDITIONS
SYMBOL
2- Thermal Resistance From Junction to Ambient
Reverse Stand Off Voltage
VRWM
Reverse Leakage Current
V_RWM = 11.0V
IR
Reverse Breakdown Voltage
I_T= 1.0mA
VBR
Clamping Voltage
I_PP = 5.0 A , tp=10/1000us
VC
Junction Cap acitance
V_R = 0V , f = 1MHz
C_J
2012-06
MIN. TYP. MAX. UNIT
-
- 11.0
V
-
-
1.0
uA
12.2 _- 13.5 V
-
-
18.0 V
- ²²⁰ -
pF
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.