TK3906NND03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03B Plastic-Encapsulate Transistors

WILLAS
FM120-M
TK39011D0T3HRU
WBF₁B_.0AP_S-_U0_R3_FB_ACEP_Mla_OUs_Nt_Tic_S-_CE_HOn_Tc_Ta_KYp_Bs_Au_Rl_Ra_IEt_Re_RT_ECr_Ta_IFn_IEs_Ri_Ss_-t₂o_0Vr_-s_200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
TRANSISTO^•R^Bbeatttcehr
process
reverse
design,
leakage
excellent
current a
power dissipation offers
nd thermal resistance.
• Low profile surface mounted application in order to
DESCRIPTIO^oN^{ptimize board space.}
PNP Epitaxia^• l^LS^owili^pc^oo^wn^eT^{r l}r^oa^sn^ss^{, h}is^igto^hr^efficiency.
• High current capability, low forward voltage drop.
FEATURES^{• High surge capability.}
Epitaxial Plana^•r^GD^uie^arC^droⁱⁿn^gst^fr^ou^rc^oti^vo^en^{rvoltage protection.}
Complementar^•y^UN^ltP^raN^hT^igy^hp^-e^spA^ev^ea^dila^sb^wlⁱe^tc(^hTⁱⁿK^g3^.904NND03)
• Silicon epitaxial planar chip, metal silicon junction.
Ultra-Small
Su_•rf_La_ec_ae_dM_-fro_eu_en_pt
Package
arts meet
en
viron
me
ntal
standards
of
Also Available in_ML_ILe_-a_Sd_TF_Dr_-e₁e₉₅V₀e₀rs_/i₂o₂n₈
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
SOD-123H
C
0.146(3.7)
0.130(3.3)
TOP
0.012(0.3) Typ.
1. BASE
2. EMITTER
BE
C
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
APPLICATIO^HN^{alogen free product for packing code suffix "H"}
3. COLLECTOR ^BACK
General PurMpoesechAmanplifciear,l sdwaittcahing
For portable_•e_Eq_pu_oi_xp_ym_{: U}e_Ln₉t:₄(_-i_V.e₀._rM_ateo_db_fi_ll_ae_mp_eh_ro_etn_ae_rd,M_anP_t 3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
• Case : Molded plastic, SOD-123H
,
Pb-Free pa^• c^Tek^ra^mgⁱⁿe^alsis^:Pa^lav^tea^di^tl^ea^rmbⁱlⁿe^{als, solderable per MIL-STD-750}
y RoHS product for paMcektihnogd 2c0o2d6 e suffix ”G”
• Polarity : Indicated by cathode band
r _{Halogen fre• eMopurnotidnguPcotsfiotiornp:aAcnyking code suffix “H”}
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
E
B ^0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in MAXIMUM RATING^MS^A(^XT^Ia^M=^U25^M℃^Ru^An^Tl^Ie^Ns^Gs^So^Ath^Ne^Drw^Ei^Ls^Ee^Cn^To^Rte^ICd^A)^{L CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol_{Single phase half wav}P_ea_,r₆a₀m_Hze_,te_rer_{sistive of inductive load.} Value
Unit
MARKING:3N
C
V_{CBO For} C_cao_pll_ae_cc_itt_io_vr_e-B_loa_as_de_{, d}V_eo_ralt_ta_eg_ce_{urrent by 20%}
lim ^{VCEO Collector-EmitterRVAoTlItNaGgSe}
-40
V
3N _{SYMBOL -F4M0120-MH FM130-MVH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200}
V_{EBO Mark}E_inm_g i_Ctt_oe_dr_e-Base Voltage
I_C MaxiCmoumlleRcetocrurCreunrtrPeenatk-CReovnetrisneuVooultsage
-5 ₁₂
VRRM -20020
13 ^V 14
30mA 40
15
50
16
60
B
E¹⁸⁸⁰
10
100
115 120
150
200
P_D ^MaxiP^mo^umwe^Rr^MD^Sis^Vs^oi^lp^taa^gt^eion
VRMS ₁₅₀14
21_mW 28
35
42
56
70
105
140
e _{RƟJA MaxiTmhuemrmDCalBRloecksiinsgtaVnoclteag, eJunction to Ambient VDC 83320}
30_℃/W 40
50
60
80
100
150
200
r _{TJ MaxiOmupmerAavtienrgagTeeFmorpwearradtRureectified Current}
IO ₁₅₀
℃
1.0
P ^Tstg Peak^SF^to^or^rw^aa^grd^eS^auⁿrg^de ^TC^eur^mre^pnt^e8^r.^a3^tm^urs^esingle half sine-wave
-55~150
IFSM
℃
30
ELECT^suR^peI^rC^imA^poL^sedC^oH^{n r}A^ateR^dA^loaC^dT^(JE^EDR^EI^CS^mT^eI^tC^hoS^d) (Ta=25℃ unless otherwise specified)
Param^Tye^ptⁱe^cr^{al Thermal Resistance (Note 2)}
Typical Junction Capacitance (Note 1)
Collec_Ot_po_er_r-_ab_tina_gse_Teb_mr_pe_ea_rak_td_uro_ew_Rn_anv_go_e ltage
Symbol^RΘJA
CJ
V_{(BR)CBO TJ}
Test conditions
I_C-=₅₅-1_t0_oμ₊A₁,₂I_5E=0
Min₁⁴₂⁰₀ Typ
Max
Unit
-40
-55 to +150 ^V
Collec_St_too_rr_a-_ge_em_Ti_et_mte_pr_erb_ar_tue_ra_ek_Rd_ao_nw_gen voltage
V_(BR)CEOTSTG
I_C=-1mA,I_B=0
--4605 to +175
V
Emitter-base breakdown voltage
V_(BR)EBO
I_E=-10μA,I_C=0
-5
V
Collector cut-off curr^Cen^Ht^{ARACTERISTICS}
I_CEX ^{SYMBOL FM12}V⁰_C^-M_E^H=-^F3^M0¹V³⁰,V^-M_E^H_B(^F_o^M_ff)¹=⁴-⁰3^-MV^{H FM150-MH FM160-MH FM180-MH FM}-¹0¹.⁰0⁰5^{-MH FM1}μ¹A^{50-MH FM1200-}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Emitte_Mr_axc_imut_u-_mof_Af_vc_eu_rar_gr_een_Rt_{everse Current at @T A=25℃}I_EBO
DC cu_Rr_ar_te_en_d t_Dg_Ca_Bin_{locking Voltage}
@T A=125^h℃^FE(1)
IR
V_EB=-5V,I_C=0
V_CE=-1V,I_C=-0.1mA
0.5
60 ₁₀
-0.1 μA
h_FE(2)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of^h4^F.0^E(V³⁾DC.
V_CE=-1V,I_C=-1mA
V_CE=-1V,I_C=-10mA
80
100
300
2- Thermal Resistance From Junction to Ambient ^hFE(4)
V_CE=-1V,I_C=-50mA
60
h_FE(5)
V_CE=-1V,I_C=-100mA
30
Collector-emitter saturation voltage
V_CE(sat)1
I_C=-10mA,I_B=-1mA
-0.25 V
V_CE(sat)2
I_C=-50mA,I_B=-5mA
-0.4
V
Base-emitter saturation voltage
V_BE(sat)1
I_C=-10mA,I_B=-1mA
-0.65
-0.85 V
V_BE(sat)2
I_C=-50mA,I_B=-5mA
-0.95 V
Transiti2on01fr2eq-0ue6ncy
f_T
V_CE=-20V,I_C=-10mA,f=100MHz
250 _{WILLAS ELECTR}MH_Oz_{NIC CO}
2012-0
WILLAS ELECTRONIC CORP.