TK3906LLD03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03D Plastic-Encapsulate Transistors

WILLAS
FM120-M
TK3906LLD0^T3^HRU
WBF₁B_.0P_{A S}-0_UR3_FD_ACEP_Mla_Os_UNti_Tc_S-_CE_Hn_OTc_Ta_KYp_Bs_Au_Rl_Ra_IEt_Re_RT_Er_Ca_TIn_FIs_ERis_S t_-2o_0Vr_-s_200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
TRANSISTO^{• Bb}R_eatttcehr
process
reverse
design, excellent power dissipation offer
leakage current and thermal resistance.
s
SOD-123H
• Low profile surface mounted application in order to
DESCRIPTIO^oN^{ptimize board space.}
PNP Epitaxi^•a^Ll ^oS^wil^pic^oo^wn^erT^lora^ssn^,s^his^igt^ho^er ^fficiency.
• High current capability, low forward voltage drop.
FEATURES^••
High surge capability.
Guardring for overvoltage
protection.
Epitaxial
Plan_•ar_UD_lti_re_a
Construction
high-speed swit
chi
ng.
Complementa_•ry_SN_iliP_coN_nT_ey_pp_ite_axA_iv_aa_{l p}ila_lab_nle_ar(T_chK_i3_p9_{, m}04_eL_taL_lD_s0_il3_ic)_{on junction.}
Ultra-Small Su_•r_Lfa_ec_ae_d-M_fro_eu_en_pt_aP_rta_sc_mka_eg_ee_{t environmental standards of}
Also Available inMILLe-aSdTDF-re19e5V0e0rs/2io2n8
• RoHS product for packing code suffix "G"
APPLICATIO^HN^{alogen free product for packing code suffix "H"}
C
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
0.146(3.7)
0.130(3.3)
TOP
0.012(0.3) Typ.
1. BASE
B
C
E 0.071(1.8)
0.056(1.4)
2. EMITTER
3. COLLECTOR ^BACK
General Pur^Mpo^es^ce^hA^amⁿpⁱli^cfie^ar^l, s^dw^ait^tc^ahing
For portable• eEqpouxipym: UeLn9t4:(-iV.e0.raMteodbfillaempehreotnared,aMnPt 3, MD,CD-ROM,
DVD-ROM, _•N_Co_at_se_eb_: o_Mo_ok_ldeP_dC_p,_lae_st_tc_ic._,)_SOD-123H
,
Pb-Free pa^• c^Tek^rmagⁱⁿe^alsis^:Pla^atv^ea^d i^tl^ea^rmbⁱlⁿe^{als, solderable per MIL-STD-750}
y _{Method 2026}
RoHS product for packing code suffix ”G”
• Polarity : Indicated by cathode band
r _{Halogen fr•eMeopurnotindguPcotsfiotiornp: aAncyking code suffix “H”}
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
E
B 0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:3N
C
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
MAXIM_RaU_tiM_ngsR_aA_{t 2}T₅I_℃NG_amS_b(T_iea_n=_{t t}2_em5℃_peru_atn_url_ee_us_ns_leso_sth_ote_her_rw_wii_ss_ee_spn_eo_cit_fie_edd_.)
Symbo_Sl_{ingle phase half wave,}P₆a₀r_Ha_zm_{, r}e_et_se_isr_{tive of inductive load.} Value
Unit
V_{CBO For ca}C_pao_cll_ie_tivc_eto_lor-_aB_da_, s_de_erV_ato_elt_ca_ug_re_{rent by 20%}
-40
V
3N
BE
lim ^VCEO
Collector-Emit_Rte_Ar_TV_INo_Glta_Sge
SYMBOL ^-F⁴M⁰120-MH FM130V-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
V_EBO MarkingECmoidtteer-Base Voltage
-5 ₁₂
13V 14
15
16
18
10
115 120
I_C
Maximu_Cm_oR_llec_cu_torr_ren_Ct _uP_re_ra_ek_nR_t e_-Cve_ors_ne_tinV_uol_ota_ug_se
VRRM _-20020
30_mA 40
50
60
80
100
150
200
P_D ^MaximuP^mo^Rw^Me^Sr D^Vois^lts^ai^gp^eation
VRMS ₁₀₀14
2_m1 _W 28
35
42
56
70
105
140
e _{RƟJA MaximuTmheDrCmBalol cRkiensgisVtoaltnacgee, Junction to Ambient VDC 125200}
3_℃0 _/W 40
50
60
80
100
150
200
r _{TJ MaximuOmpAevreartaingeg FToermwapredrRaetuctriefied Current}
IO ₁₅₀
℃
1.0
P ^Tstg ^{Peak FoSrwtoarrdagSeurgaenCduTrreenmt 8p.e3rmastusrinegle half sine-wave} _IFSM ^-55~150
℃
30
ELEC^sT^upR^erIⁱC^mpA^osL^edC^onH^raA^teR^d A^loaC^d T^(JEE^DR^ECIS^mT^eI^thC^odS⁾ (Ta=25℃ unless otherwise specified)
Typical_PT_ahe_rarm_mal_eR_tee_rsistance (Note 2)
Typical Junction Capacitance (Note 1)
Colle_Oc_pto_err_a-_tb_ina_gs_Te_embr_pe_ea_rak_tud_ro_e w_Ran_ngv_eoltage
Symbo^Rl ^ΘJA
Test conditions
CJ
V_{(BR)CBO TJ} I_C=-10μA,I_E=_-50_{5 to +125}
MIin⁴⁰
120
-40
Typ Max
-55 to +150
Unit
V
Colle_Sc_tt_oo_rar-_ge_em_Teit_mte_pr_erb_atr_ue_reak_Rd_ao_ngw_en voltage
V_(BR)CEOTSTGI_C=-1mA,I_B=0
-^-6⁴5⁰to +175
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10μA,I_C=0
-5
V
Collector cut-off curr^Ce^Hn^At^RACTERISTICS
I_CEX ^SYMBV^O_C^L_E^F=^M-3¹²0⁰V^-M,V^H_E^F_B^M_(o¹_f³_f)⁰=^-M-3^HV^{FM140-MH FM150-MH FM160-MH FM180-MH FM}-¹0¹⁰.0^0-5^{MH FM1}μ¹A^{50-MH FM1200-M}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Emitt_Me_ar_xc_imu_ut-_mo_Aff_vc_eru_ar_gr_ee_Rn_et_{verse Current at @T A=25℃}I_EBO
Rated DC Blocking Voltage
@T A=125^h℃^FE(1)
V_EB=-5V,I_C=0
IR _{VCE=-1V,IC=-0.1mA}
0.5
60₁₀
-0.1 μA
h_FE(2)
NOTES:
DC c₁u_-r_Mre_ean_st_urg_ea_d i_an_{t 1 MHZ and applied reverse voltage of} h_{4.F0EV(3D) C.}
V_CE=-1V,I_C=-1mA
V_CE=-1V,I_C=-10mA
80
100
300
2- Thermal Resistance From Junction to Ambient
h_FE(4)
V_CE=-1V,I_C=-50mA
60
h_FE(5) V_CE=-1V,I_C=-100mA
30
Collector-emitter saturation voltage
V_CE(sat)1
V_CE(sat)2
I_C=-10mA,I_B=-1mA
I_C=-50mA,I_B=-5mA
-0.25 V
-0.4
V
Base-emitter saturation voltage
V_BE(sat)1
V_BE(sat)2
I_C=-10mA,I_B=-1mA
I_C=-50mA,I_B=-5mA
-0.65
-0.85 V
-0.95 V
Transiti₂o₀n₁fr₂e_-q₀u₆ency
f_T
V_CE=-20V,I_C=-10mA,f=100MHz
250_{WILLAS ELECTR}M_OHz_{NIC COR}
2012-0
WILLAS ELECTRONIC CORP.