TK3904NND03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03B Plastic-Encapsulate Transistors

WILLAS
FM120-M
TK3904NND0^T3^HRU
WBF₁B_.0AP_S-_U0_R3_FB_ACEP_Mla_Os_UNti_Tc_S-_CE_Hn_OTc_Ta_KYp_Bs_Au_Rl_Ra_IEt_Re_RT_ECra_TIn_FIEs_Ri_Ss_-t₂o_0Vr_-s_200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
TRANSISTORbetter reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
DESCRIPTIOoNptimize board space.
NPN Epitaxi•aLl oSwilipcoownerTlroasns,shisigtoh refficiency.
• High current capability, low forward voltage drop.
Package outline
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
SOD-123H
TOP
0.146(3.7)
B ^0.130(3.3)
E ^{0.012(0.3) Typ.}
FEATURES^{• High surge capability.}
Epitaxial Pla^•n^Ga^ur ^aD^rdie^rinC^go^fon^rs^ot^vru^erc^vt^oio^ltn^{age protection.}
1. BASE
C
Complemen^•ta^Ur^ly^traP^hN^igP^h-T^sy^pp^eee^dA^sv^wa^iti^cla^hibⁿl^ge^. (TK3906NND03)
Ultra-Small S^• u^Sr^ilfⁱa^cocⁿe^eM^pito^au^xn^iat^{l p}P^laaⁿc^ak^ra^cg^he^{ip, metal silicon junction.}
Also Availab^•le^Lein^adL^-fe^rea^ed^pF^ar^rte^se^mV^eee^tr^esⁿio^vn^{ironmental standards of}
MIL-STD-19500 /228
2. EMITTER
3. COLLECTOR ^BACK
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
APPLICATIOHNalogen free product for packing code suffix "H"
E
B
General PurMpoesechAmanpliifciear,l sdwaittcahing
For portable_•e_Eq_pu_oi_xp_ym_{: U}e_Ln₉t:₄(_-i_V.e₀._rM_ateo_db_fi_ll_ae_mp_eh_ro_etn_ae_rd,M_anP_t 3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
• Case : Molded plastic, SOD-123H
Pb-Free
pa• cTekramginealsis:Palavteaditlearmbilneals,
solderable
per
,
MIL-STD-750
y _{RoHS product for paMcektihnogd 2c0o2d6 e suffix ”G”}
r_{1N Halogen fre}• _ePo_pla_rr_oit_dy :_uI_cnd_t i_fc_oat_re_pd _aby_cc_ka_inth_god_ce_ob_dan_ed _{suffix “H”}
• Mounting Position : Any
0.040(1.0)
0.024(0.6)
M^0.03A¹⁽⁰R^.8)K^TyI^pN^. G:1N
C
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _{• Weight : Approximated 0.011 gram}
BE
in ^{MAXIMUM RATINGMSA(XTIaM=U25M℃RuAnTlIeNsGsSoAthNeDrwEiLsEeCnToRteICdA)L CHARACTERISTICS}
Sym^Rb^ao^til^{ngs at 25℃ ambient temperature unle}P^sa^sr^oa^tm^hee^rwte^isr^{e specified.}
Value
Unit
Single phase half wave, 60Hz, resistive of inductive load.
V_{CBOFor capa}C_co_itil_vle_ec_lt_oo_ar_d-B_{, d}a_es_re_ateVo_cl_uta_rrg_ene_{t by 20%}
60
V
lim ^VCEO
Collector-Em_Rit_Ate_Tr_INV_Go_Sltage
V_{EBOMarking C}E_om_deitter-Base Voltage
40
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
12
13
14
15
6₁₆
18
10^V
115 120
I_C ^MaximumC^Ro^el^cle^uc^rrt^eoⁿr^t C^Peu^ar^kre^Rn^et^v-^eC^rso^en^Vti^on^ltu^ao^geus
P_C ^MaximumC^Ro^Mll^Sec^Vt^oo^lr^taD^geissipation
e _{TJ MaximumJDuCncBtlioocnkiTnegmVoplteargaeture}
r _{Tstg MaximumSAtoveraraggee FToermwapredrRaetucrtiefied Current}
VRRM
20
30
40
50 _0.260
80
100_A
150
200
VRMS
14
21
28
35 _0.14₅2
56
70_W
105
140
VDC
20
30
40
50 ₁₅6₀0
80
10_℃0
150
200
IO
-55~15¹0^.0
℃
Peak Forward Surge Current 8.3 ms single half sine-wave
P _{ELECTsuRpeIrCimApoLsedCoHn rAateRdAloaCdT(JEEDREICSmTeItChoSd) (Ta=25℃}
u^IFn^SMless
otherwise
specified)
30
Typical Thermal Resistance (Note 2)
Typical^PJ^au^rn^act^mion^etC^ea^rpacitance (Note 1)
Collec^Ot^po^er^r-^ab^tina^gse^Teb^mr^pe^ea^rak^td^uro^ew^Rn^anv^go^eltage
Collec^St^too^rr^a-^ge^em^Ti^et^mte^pr^eb^rar^tue^ra^ek^Rd^aoⁿw^gen voltage
RΘJA
Symbol _CJ
Test conditions
V_(BR)CBO TJI_C=10μA,I_E=0^{-55 to +125}
V_(BR)CEO^TSTGI_C=1mA,I_B=0
40
Min₁₂₀ Typ
Max
60
-55 to +150
-₄6₀5 to +175
Unit
V
V
Emitter-base breakdo_Cw_Hn_ARv_Ao_Clt_Ta_Eg_Re_ISTICS
Collec_Mt_ao_xr_imc_uu_mt-_Fo_of_rf_wc_au_rdrr_Ve_on_ltat_{ge at 1.0A DC}
V_(BR)EBO I_E=10μA,I_C=0
6
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
I_{CEX VF}V_CE=30V,V_EB(off)=3V_0.50
0.70
0.85 ^0.05
μ₀A_.9
0.92
Emitte_Mr_axc_imut_u-_mof_Af_vc_eu_rar_gr_een_Rt_{everse Current at @T A=25℃}IEBO _IRVEB=5V,IC=0
Rated DC Blocking Voltage
@T A=125h℃FE(1) VCE=1V,IC=0.1mA
0.5
40 10
0.1
μA
NOTES:
h_FE(2)
DC cu_1-r_Mre_en_ast_ug_rea_din_{at 1 MHZ and applied reverse voltage ofh4F.0E(V3)DC.}
2- Thermal Resistance From Junction to Ambient ^hFE(4)
V_CE=1V,I_C=1mA
V_CE=1V,I_C=10mA
V_CE=1V,I_C=50mA
70
100
300
60
h_FE(5) V_CE=1V,I_C=100mA
30
Collector-emitter saturation voltage
V_CE(sat)1
V_CE(sat)2
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
0.2
V
0.3
V
Base-emitter saturation voltage
V_BE(sat)1
V_BE(sat)2
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
0.65
0.85
V
0.95
V
Transiti₂on₀₁fr₂eq_-0ue₆ncy
f_T
V_CE=20V,I_C=10mA,f=100MHz
300 _{WILLAS ELECTR}MH_Oz_{NIC CO}
2012-0
WILLAS ELECTRONIC CORP.